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Gallium Oxide Power Semiconductor Devices

氧化镓功率半导体器件

基本信息

批准号：
2319539
负责人：
金额：
--
依托单位：
Swansea University
依托单位国家：
英国
项目类别：
Studentship
财政年份：
2020
资助国家：
英国
起止时间：
2020 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=studentship-2319539
关键词：
Gallium Oxide Power Semiconductor Devices

项目摘要

Aims and Objectives- Deliver a disruptive technology for high voltage (>10kV) gallium oxide power electronics application. These devices are ubiquitous in grid-level power systems.- Main aim is to fabricate a normally-off gallium oxide transistor.- Explore novel processing techniques including ion implantation, oxide deposition, metallisation and corresponding annealing in order to establish a device technology in B-gallium oxide. - Design the final power semiconductor device through utilising finite element software that covers 2-D, 3-D field effect transistor structures and process flow. MethodologyThe work will be undertaken in the Centre for Nano-health cleanroom micro- and nano-fabrication suite. Through a series of novel photolithography, oxide / metal deposition and annealing steps, devices based on B -gallium oxide will be fabricated. The devices fabricated will be based on structures that have previously been designed / modelled using finite element software, a classic drift-diffusion tool that emulates current flow, electric field distribution and process flows of semiconductor device technology. Finally, the device structures will be characterised electrically and physically on probe stations, semiconductor analysers and the microscopy suite available through the Materials Academy. Much of this work will be carried out in the Wolfson Research Laboratory.

目标和目标-为高压(&gt；10kv)氧化镓电力电子应用提供一种颠覆性技术。这些设备在电网级别的电力系统中无处不在。-主要目标是制造一种正常关闭的氧化镓晶体管。-探索新的加工技术，包括离子注入、氧化物沉积、金属化和相应的退火，以便建立一种B-氧化镓的设备技术。-利用涵盖2-D、3-D场效应晶体管结构和工艺流程的有限元软件设计最终的功率半导体器件。方法这项工作将在纳米健康中心洁净室微纳米制造套件中进行。通过一系列新颖的光刻、氧化物/金属沉积和退火等步骤，将制备出基于B-镓氧化物的器件。制造的器件将基于以前使用有限元软件设计/建模的结构，有限元软件是一种经典的漂移扩散工具，可以模拟半导体器件技术的电流、电场分布和工艺流程。最后，将在探针站、半导体分析器和材料学院提供的显微镜套件上对器件结构进行电学和物理表征。这项工作的大部分将在沃尔夫森研究实验室进行。