High Power IGBT Modules for Marine Drive Applications (HiDrive)

用于船舶驱动应用的高功率 IGBT 模块 (HiDrive)

• 批准号: DT/E004687/1
• 负责人: Shankar Ekkanath-Madathil
• 金额: $ 22.93万
• 依托单位: De Montfort University
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=DT%2FE004687%2F1
• 关键词: Power; IGBT; Modules; Marine; Drive

This project builds upon the successful UK based development by De Montfort University, Semelab and Dynex of an innovative device technology called the Clustered IGBT (CIGBT). Through various collaborative research projects, CIGBT devices have been developed at 1200V and 1700V ratings, funded through EPSRC and industrial support. These devices combine a thyristor current carrying capability with MOS gate control and a unique self-clamping feature to provide low on-state and switching losses whilst still maintaining a wide safe operating area. Electrical results from pre-production 1200V devices show significant reductions in on-state forward volt drop whilst still maintaining similar switching losses to that of an IGBT technology. This project will analyse, for the first time, the device structure at higher operational voltages at and above 3.3kV. This device technology is well suited for high voltage operation as the thyristor current carrying mechanism will provide low on-state losses, which are the dominant losses for such high voltage applications. Preliminary simulations of a 3.3kV CIGBT structure indicate that for similar switching losses to an IGBT the current density through the die can be increased by 20%, therefore making the technology well suited for marine drive and other applications that can benefit from increased power density. Novel busbar connection strategies will free-up module footprint area for extra silicon, thus further increasing power density. Studies will include: a) the use of internal busbars to control electric field strength within backfill material and at metallised edges of the substrates, thereby reducing susceptibility of insulation system to partial discharge and eventual failure and b) the decoupling of internal busbar cooling from the substrate by transferring this function to the converter interconnecting busbars, thereby reducing the baseplate temperature rise. Both of these innovative approaches will significantly increase power density by making use of the Z-axis dimension and taking functionality from the baseplate.

该项目建立在英国德蒙福特大学、Semelab和DyneX成功开发一种名为集群式IGBT(CIGBT)的创新设备技术的基础上。通过各种合作研究项目，在EPSRC和工业支持的资助下，已开发出额定电压为1200V和1700V的CIGBT器件。这些器件将晶闸管载流能力与MOS栅极控制和独特的自钳位功能相结合，在保持广泛的安全操作区域的同时，提供较低的导通状态和开关损耗。生产前1200V器件的电气结果显示，导通状态正向电压降显著降低，同时仍保持与IGBT技术类似的开关损耗。本项目将首次对3.3KV及以上较高工作电压下的器件结构进行分析。该器件技术非常适合高压运行，因为晶闸管载流机构将提供低通态损耗，这是此类高压应用的主要损耗。对3.3kVCIGBT结构的初步模拟表明，对于与IGBT类似的开关损耗，流过管芯的电流密度可以增加20%，因此该技术非常适合于船舶驱动和其他可以从提高功率密度中受益的应用。新颖的母线连接策略将释放模块占地面积，以获得额外的硅，从而进一步提高功率密度。研究将包括：a)使用内部母线来控制回填材料内和基板金属化边缘处的电场强度，从而降低绝缘系统对局部放电和最终故障的敏感性，以及b)通过将这一功能转移到转换器互连母线来使内部母线冷却与基板分离，从而降低基板温升。这两种创新方法都将通过利用Z轴尺寸并从底板获取功能来显著提高功率密度。