High Power IGBT Modules for Marine Drive Applications (HiDrive)

用于船舶驱动应用的高功率 IGBT 模块 (HiDrive)

• 批准号: DT/E004687/2
• 负责人: Shankar Ekkanath-Madathil
• 金额: --
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2007
• 资助国家: 英国
• 起止时间: 2007 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=DT%2FE004687%2F2
• 关键词: Power; IGBT; Modules; Marine; Drive

This project builds upon the successful UK based development by De Montfort University, Semelab and Dynex of an innovative device technology called the Clustered IGBT (CIGBT). Through various collaborative research projects, CIGBT devices have been developed at 1200V and 1700V ratings, funded through EPSRC and industrial support. These devices combine a thyristor current carrying capability with MOS gate control and a unique self-clamping feature to provide low on-state and switching losses whilst still maintaining a wide safe operating area. Electrical results from pre-production 1200V devices show significant reductions in on-state forward volt drop whilst still maintaining similar switching losses to that of an IGBT technology. This project will analyse, for the first time, the device structure at higher operational voltages at and above 3.3kV. This device technology is well suited for high voltage operation as the thyristor current carrying mechanism will provide low on-state losses, which are the dominant losses for such high voltage applications. Preliminary simulations of a 3.3kV CIGBT structure indicate that for similar switching losses to an IGBT the current density through the die can be increased by 20%, therefore making the technology well suited for marine drive and other applications that can benefit from increased power density. Novel busbar connection strategies will free-up module footprint area for extra silicon, thus further increasing power density. Studies will include: a) the use of internal busbars to control electric field strength within backfill material and at metallised edges of the substrates, thereby reducing susceptibility of insulation system to partial discharge and eventual failure and b) the decoupling of internal busbar cooling from the substrate by transferring this function to the converter interconnecting busbars, thereby reducing the baseplate temperature rise. Both of these innovative approaches will significantly increase power density by making use of the Z-axis dimension and taking functionality from the baseplate.

该项目建立在英国De Montfort大学、Semelab和Dynex成功开发的一种名为集群IGBT （CIGBT）的创新设备技术的基础上。通过各种合作研究项目，在EPSRC和工业支持的资助下，CIGBT器件已开发出1200V和1700V额定值。这些器件结合了晶闸管载流能力与MOS栅极控制和独特的自箝位功能，提供低导通状态和开关损耗，同时仍保持广泛的安全工作区域。预生产1200V器件的电气结果显示，导通状态正向压降显著降低，同时仍保持与IGBT技术相似的开关损耗。本项目将首次分析3.3kV及以上工作电压下的器件结构。该器件技术非常适合高压工作，因为晶闸管载流机制将提供低导通状态损耗，这是这种高压应用的主要损耗。对3.3kV CIGBT结构的初步模拟表明，对于与IGBT相似的开关损耗，通过芯片的电流密度可以增加20%，因此该技术非常适合船舶驱动和其他可以从功率密度增加中受益的应用。新颖的母线连接策略将为额外的硅释放模块占地面积，从而进一步提高功率密度。研究将包括：a)使用内部母线来控制回填材料内部和基板金属化边缘的电场强度，从而降低绝缘系统对局部放电和最终失效的敏感性；b)通过将该功能转移到转换器互连母线上，将内部母线冷却与基板分离，从而降低基板温升。这两种创新方法都将通过利用z轴尺寸和底板的功能来显着提高功率密度。