Fabrication of first 337 nm laser diodes for biological applications

制造首款用于生物应用的 337 nm 激光二极管

• 批准号: EP/F03363X/1
• 负责人: Tao Wang
• 金额: $ 6.26万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2008
• 资助国家: 英国
• 起止时间: 2008 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FF03363X%2F1
• 关键词: Fabrication; first; 337; nm; laser

Recently, with the unfortunate emergence of bio-terrorism and its threat to both military targets and civilian populations, it is necessary to develop a portable and cheap system to continuously monitor for any potential aerosolized agents (biological particles) released from deadly biological weapons in any open area, even in harsh environments. As most bio-molecules show strong absorption in the ultra-violet (UV) spectral region ranging from 280 to 340 nm, an efficient UV lighting source is expected to be a crucial component for next-generation biological detection, biological imaging and disease analysis applications. In particular use of UV laser diodes would enable high sensitivity detection systems. III-nitride semiconductors are the best materials to make such laser diodes. In last decade, there have been major achievements in this area. However, the achievements are limited to the violet/blue spectral region, with those devices mainly based on the InGaN alloy. Due to a number of challenges in material growth, a 343 nm laser diode is the shortest one so far reported. Obviously, such a laser diode is not short enough to be employable for above applications.Target of this exploratory project is the development of the first 337 nm UV laser diode based on the GaN/AlGaN material system to replace currently used N2 gas-based lasers. This work is based on recent major advances of the here involved UK teams in the field of III-nitride semiconductors. Further applications of the technology involve biological imaging as an efficient method to detect diseases in a human body, for example, cancerous tissues.

最近，随着生物恐怖主义的不幸出现及其对军事目标和平民的威胁，有必要开发一种便携式且廉价的系统来持续监测任何开放区域甚至恶劣环境中致命生物武器释放的任何潜在气雾剂（生物颗粒）。由于大多数生物分子在 280 至 340 nm 的紫外线 (UV) 光谱区域表现出强吸收，因此高效的紫外线光源预计将成为下一代生物检测、生物成像和疾病分析应用的关键组成部分。特别是使用紫外激光二极管将实现高灵敏度检测系统。 III族氮化物半导体是制造此类激光二极管的最佳材料。近十年来，该领域取得了重大成就。然而，这些成果仅限于紫/蓝色光谱区域，这些器件主要基于 InGaN 合金。由于材料生长面临诸多挑战，343 nm 激光二极管是迄今为止报道的最短的激光二极管。显然，这样的激光二极管不够短，无法用于上述应用。该探索性项目的目标是开发第一个基于GaN/AlGaN材料系统的337 nm紫外激光二极管，以取代目前使用的氮气激光器。这项工作基于英国团队在 III 族氮化物半导体领域的最新重大进展。该技术的进一步应用涉及生物成像作为检测人体疾病（例如癌组织）的有效方法。

项目成果

Optical gain in AlGaN/AlGaN multiple quantum wells grown on high temperature AlN multiple buffers

在高温 AlN 多重缓冲器上生长的 AlGaN/AlGaN 多量子阱的光学增益

• DOI: 10.1002/pssc.201001060
• 发表时间: 2011
• 期刊: physica status solidi c
• 作者: Gong Y

Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire

使用高温 AlN 缓冲技术在蓝宝石上生长的 AlGaN 多量子阱的 340 nm 受激发射

• DOI: 10.1063/1.3253416
• 发表时间: 2009
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Wang Q

Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer

包含氮化镓中间层的 340 nm 发光二极管的温度依赖性行为

• DOI: 10.1088/0022-3727/41/9/094004
• 发表时间: 2008
• 期刊: Applied Physics
• 作者: Airey R

Electron microscopy of AlGaN-based multilayers for UV laser devices

用于紫外激光器件的 AlGaN 多层膜的电子显微镜

• DOI: 10.1088/1742-6596/241/1/012048
• 发表时间: 2010
• 期刊: Conference Series
• 作者: Lari L

Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures

• DOI: 10.1063/1.3656971
• 发表时间: 2011-10-24
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Gong, Y. P.;Xing, K.;Wang, T.
• 通讯作者: Wang, T.