Advanced III-nitride materials for next generation UV emitters used in water purification, environmental protection and local network communication

用于水净化、环境保护和本地网络通信的下一代紫外线发射器的先进III族氮化物材料

• 批准号: EP/M003132/1
• 负责人: Tao Wang
• 金额: $ 65.16万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2014
• 资助国家: 英国
• 起止时间: 2014 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FM003132%2F1
• 关键词: Advanced; III; nitride; materials; next

The delivery of a sustainable future needs an excellent management of natural resources and also requires the world's environment to be maintained in good condition. Both of these are crucial for maintaining sustainable development and can be promoted by the development of advanced materials which can be fabricated into improved ultraviolet (UV) light sources. 280 nm or sub-280 nm UV light sources have many important applications in establishing high standard infrastructures, such as water purification, environmental protection, local network communication, medical equipment decontamination, etc.Therefore, it is crucial to obtain advanced materials with these multiple functions in high crystal quality which can be fabricated into compact, light-weight and robust 280 nm UV emitters with high efficiency. The III-nitride semiconductor alloy AlGaN, has a direct bandgap across its entire composition range, covering a major part of the UV spectrum from 210 to 365 nm, and is the best material system to realize such a lighting source. The last decade has seen impressive developments in III-nitrides. However, the achievements are largely limited to the InGaN/GaN material system for the fabrication of the emitters mainly in the visible spectra region. High Al content AlGaN or AlN are required to achieve emission at 280 nm. In the last decade, considerable effort has been to the development of deep-UV III-nitride materials world wide. However, the results are far from satisfactory. The major issue is due to AlGaN or AlN material currently grown on c-plane substrates. These polar III-nitride semiconductor materials lead to a number of severe fundamental limits in science and technology, which are heavily restricting further development of deep UV emitters. The proposed project will combine our extensive and complementary experiences in advanced metal-organic vapour phase epitaxy (MOVPE) growth and nanofabrication technology (Sheffield), optical and electron-beam studies of III-nitrides (Strathclyde), micro-structural investigation (Imperial), and advanced Hydride Vapour Phase Epitaxy (HVPE) growth for free-standing AlN substrate and flip-chip device fabrication (Nanjing, China). The combined research and development programme aims to achieve an understanding of the interrelated individual issues, and then to achieve advanced non/semi-polar AlGaN or AlN which will be applied to the demonstration of a new type of non/semi-polar LEDs. We also aim to develop the first 280 nm UV laser diode (non/semi-polar LDs), while the shortest wavelength laser diode reported so far is limited to 336 nm.

实现可持续的未来需要对自然资源进行良好的管理，还需要保持世界环境的良好状态。这两者对于维持可持续发展都至关重要，并且可以通过开发先进材料来促进，这些材料可以制造成改进的紫外线（UV）光源。280 nm或低于280 nm的紫外光源在建立高标准基础设施方面有许多重要的应用，例如水净化、环境保护、局域网通信、医疗设备去污等。因此，获得具有这些多种功能的高晶体质量的先进材料是至关重要的，重量轻、坚固耐用的280 nm紫外线发射器，效率高。III族氮化物半导体合金AlGaN在其整个组成范围内具有直接带隙，覆盖了从210到365 nm的UV光谱的主要部分，并且是实现这种光源的最佳材料系统。在过去的十年中，III族氮化物取得了令人印象深刻的发展。然而，这些成就在很大程度上局限于InGaN/GaN材料系统，用于主要在可见光谱区的发射器的制造。需要高Al含量的AlGaN或AlN才能实现280 nm的发射。在过去的十年中，相当大的努力已经在世界范围内的深紫外III族氮化物材料的发展。然而，结果远非令人满意。主要问题是由于AlGaN或AlN材料目前生长在c平面衬底上。这些极性III族氮化物半导体材料导致了科学和技术中的一些严重的基本限制，这些限制严重限制了深紫外发射器的进一步发展。拟议的项目将联合收割机我们在先进的金属有机气相外延（MOVPE）生长和纳米纤维技术（谢菲尔德），III族氮化物的光学和电子束研究（斯特拉斯克莱德），微结构研究（帝国）和先进的氢化物气相外延（HVPE）生长独立的AlN衬底和倒装芯片器件制造（南京，中国）的广泛和互补的经验。联合研究和开发计划旨在实现相互关联的个别问题的理解，然后实现先进的非/半极性AlGaN或AlN，将应用于新型非/半极性LED的演示。我们的目标是开发第一个280 nm的紫外激光二极管（非/半极性LD），而迄今为止报道的最短波长激光二极管仅限于336 nm。

项目成果

Luminescence behavior of semipolar (101¯1) InGaN/GaN "bow-tie" structures on patterned Si substrates

图案化 Si 衬底上半极性 (101×1) InGaN/GaN“领结”结构的发光行为

• DOI: 10.1063/1.5129049
• 发表时间: 2020
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Bruckbauer J

Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm

• DOI: 10.1016/j.solmat.2017.10.005
• 发表时间: 2018-02
• 期刊: Solar Energy Materials and Solar Cells
• 影响因子: 6.9
• 作者: J. Bai;Y. Gong;Z. Li;Yun Zhang;Tao Wang

Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112¯0) GaN

生长模板微图案对非极性(112×0)GaN缺陷减少和光学性能的影响

• DOI: 10.1088/1361-6463/abbc37
• 发表时间: 2020
• 期刊: Applied Physics
• 作者: Bruckbauer J

Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates

• DOI: 10.1088/1361-6641/aaed93
• 发表时间: 2018-12-01
• 期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
• 影响因子: 1.9
• 作者: Bai, J.;Jiu, L.;Wang, T.
• 通讯作者: Wang, T.

The 2020 UV emitter roadmap

• DOI: 10.1088/1361-6463/aba64c
• 发表时间: 2020-12-09
• 期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
• 影响因子: 3.4
• 作者: Amano, Hiroshi;Collazo, Ramon;Zhang, Yuewei
• 通讯作者: Zhang, Yuewei