Liquid injection ALD of Cp- based precursors for deposition of dielectric materials

用于沉积介电材料的 Cp 基前体的液体注射 ALD

• 批准号: EP/D068606/1
• 负责人: Paul Chalker
• 金额: $ 66.72万
• 依托单位: University of Liverpool
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FD068606%2F1
• 关键词: Liquid; injection; ALD; Cp; based

The rapid growth of the silicon-based microelectronics industry since the late 1980's has fuelled a demand for greater integrated circuit functionality and improved performance at lower cost. This requires an increased circuit density, which has been achieved by a continual reduction, or scaling , in the dimensions of the field effect transistor (FET). Previously amorphous SiO2 and more recently variants of Si-O-N have been exploited in metal-oxide-semiconductor field effect transistor (MOSFET) technology, due to the stable high quality Si-SiO2 interface achievable, and excellent electrical isolation properties. Shrinking of the transistor feature size in each new 'generation' of devices, has forced the gate dielectric thickness to be reduced, to the nanometre-scale level where direct electron tunnelling effects and high leakage currents present serious obstacles to future device reliability. These 'generations' are commonly described by 'nodes' determined by the half pitch between two CMOS gate contact or first metal level. While 90nm node technologies are in industrial production, 65nm node technologies are in advanced status of industrial development and expected to enter in full production in 2007 at the latest. To move to the 45nm node and beyond, the use of materials with a higher dielectric constant (k) (cf. SiO2 derivatives) allows an equivalent capacitance to be achieved in a physically thicker insulating layer, providing reduced leakage currents. This is a multidisciplinary project with the ultimate objective of developing novel liquid injection atomic layer deposition (ALD) process technologies for the manufacture of next generation gate dielectric thin films. The principal aims of the project are therefore to develop an ALD process based on volatile cyclopentadienyl precursors for deposition of hafnium and rare-earth metal oxides, and to assess the physico-chemical and electronic properties of the resulting high-? dielectric films for semiconductor applications.

自 20 世纪 80 年代末以来，硅基微电子行业的快速发展推动了对更强大的集成电路功能和以更低的成本提高性能的需求。这需要增加电路密度，这可以通过不断减小或缩小场效应晶体管 (FET) 的尺寸来实现。由于可实现稳定的高质量 Si-SiO2 界面和出色的电隔离特性，以前的非晶 SiO2 和最近的 Si-O-N 变体已被用于金属氧化物半导体场效应晶体管 (MOSFET) 技术。每一代新器件中晶体管特征尺寸的缩小，迫使栅极电介质厚度减小到纳米级水平，其中直接电子隧道效应和高漏电流对未来器件的可靠性构成了严重障碍。这些“世代”通常用“节点”来描述，“节点”由两个 CMOS 栅极触点或第一金属层之间的半节距确定。 90纳米节点技术已进入产业化生产，而65纳米节点技术则处于产业发展的先进地位，预计最迟将于2007年进入全面生产。为了进入 45nm 节点及更高节点，使用具有更高介电常数 (k) 的材料（参见 SiO2 衍生物）可以在物理上更厚的绝缘层中实现等效电容，从而减少漏电流。这是一个多学科项目，最终目标是开发新型液体注入原子层沉积 (ALD) 工艺技术，用于制造下一代栅极电介质薄膜。因此，该项目的主要目标是开发一种基于挥发性环戊二烯基前体的 ALD 工艺，用于沉积铪和稀土金属氧化物，并评估所得高？用于半导体应用的介电薄膜。

项目成果

Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct

重新审视二甲基锌加合物化学：使用二甲基锌 1,4-二恶烷加合物进行垂直排列 ZnO 纳米线的 MOCVD

• DOI: 10.1016/j.jcrysgro.2010.09.016
• 发表时间: 2011
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: Kanjolia R

Tailoring precursors for deposition: synthesis, structure, and thermal studies of cyclopentadienylcopper(i) isocyanide complexes.

• DOI: 10.1021/acs.inorgchem.5b00448
• 发表时间: 2015-05
• 期刊: Inorganic chemistry
• 影响因子: 4.6
• 作者: Alexander M Willcocks;Thomas Pugh;Samuel D. Cosham;J. A. Hamilton;S. Sung;Tobias Heil;P. Chalker;Paul A. Williams;G. Kociok‐Köhn;A. Johnson