Liquid injection ALD of Cp- based precursors for deposition of dielectric materials

自20世纪80年代后期以来，基于硅的微电子工业的快速增长推动了对更大的集成电路功能和以更低的成本提高性能的需求。这需要增加的电路密度，这已经通过场效应晶体管（FET）的尺寸的持续减小或缩放来实现。由于可实现稳定的高质量Si-SiO2界面和优异的电隔离特性，先前的非晶SiO2和最近的Si-O-N变体已经在金属氧化物半导体场效应晶体管（MOSFET）技术中被开发。在每一代新器件中，晶体管特征尺寸的缩小迫使栅极电介质厚度减小到纳米级水平，其中直接电子隧穿效应和高漏电流对未来器件的可靠性构成严重障碍。这些“代”通常由两个CMOS栅极接触或第一金属层之间的半间距确定的“节点”来描述。90纳米节点技术已进入工业化生产阶段，65纳米节点技术则处于工业化发展的高级阶段，预计最迟将于2007年全面投产。为了移动到45 nm节点和更高，使用具有更高介电常数（k）的材料（参见图1）。SiO2衍生物）允许在物理上较厚的绝缘层中实现等效电容，从而提供减小的漏电流。这是一个多学科项目，最终目标是开发新的液体注入原子层沉积（ALD）工艺技术，用于制造下一代栅极电介质薄膜。因此，该项目的主要目的是开发一种ALD工艺的基础上挥发性的铪和稀土金属氧化物的沉积前体，并评估由此产生的高？用于半导体应用的介电膜。

The rapid growth of the silicon-based microelectronics industry since the late 1980's has fuelled a demand for greater integrated circuit functionality and improved performance at lower cost. This requires an increased circuit density, which has been achieved by a continual reduction, or scaling , in the dimensions of the field effect transistor (FET). Previously amorphous SiO2 and more recently variants of Si-O-N have been exploited in metal-oxide-semiconductor field effect transistor (MOSFET) technology, due to the stable high quality Si-SiO2 interface achievable, and excellent electrical isolation properties. Shrinking of the transistor feature size in each new 'generation' of devices, has forced the gate dielectric thickness to be reduced, to the nanometre-scale level where direct electron tunnelling effects and high leakage currents present serious obstacles to future device reliability. These 'generations' are commonly described by 'nodes' determined by the half pitch between two CMOS gate contact or first metal level. While 90nm node technologies are in industrial production, 65nm node technologies are in advanced status of industrial development and expected to enter in full production in 2007 at the latest. To move to the 45nm node and beyond, the use of materials with a higher dielectric constant (k) (cf. SiO2 derivatives) allows an equivalent capacitance to be achieved in a physically thicker insulating layer, providing reduced leakage currents. This is a multidisciplinary project with the ultimate objective of developing novel liquid injection atomic layer deposition (ALD) process technologies for the manufacture of next generation gate dielectric thin films. The principal aims of the project are therefore to develop an ALD process based on volatile cyclopentadienyl precursors for deposition of hafnium and rare-earth metal oxides, and to assess the physico-chemical and electronic properties of the resulting high-? dielectric films for semiconductor applications.