Liquid injection ALD of Cp- based precursors for deposition of dielectric materials

自20世纪80年代末以来，硅基微电子工业的快速增长推动了对更大集成电路功能和更低成本改进性能的需求。这需要增加电路密度，这是通过不断减少或缩放场效应晶体管（FET）的尺寸来实现的。以前无定形SiO2和最近的Si-O-N的变化已被用于金属氧化物半导体场效应晶体管（MOSFET）技术，因为可以实现稳定的高质量Si-SiO2界面，以及优异的电隔离性能。在每一代新器件中，晶体管特征尺寸的缩小，迫使栅极介电厚度减小到纳米级，在纳米级，直接电子隧穿效应和高泄漏电流对未来器件的可靠性构成严重障碍。这些“世代”通常由“节点”描述，由两个CMOS栅极接触或第一金属电平之间的半间距决定。90nm节点技术处于工业生产阶段，而65nm节点技术处于工业发展的先进状态，预计最迟在2007年进入全面生产。为了移动到45nm节点及以上，使用具有更高介电常数(k)的材料（cf. SiO2衍生物）可以在物理上较厚的绝缘层中实现等效电容，从而减少泄漏电流。这是一个多学科项目，最终目标是开发新的液体注入原子层沉积（ALD）工艺技术，用于制造下一代栅极介电薄膜。因此，该项目的主要目的是开发一种基于挥发性环戊二烯基前驱体的ALD工艺，用于沉积铪和稀土金属氧化物，并评估由此产生的高纯度金属氧化物的物理化学和电子特性。半导体用介电薄膜。

The rapid growth of the silicon-based microelectronics industry since the late 1980's has fuelled a demand for greater integrated circuit functionality and improved performance at lower cost. This requires an increased circuit density, which has been achieved by a continual reduction, or scaling , in the dimensions of the field effect transistor (FET). Previously amorphous SiO2 and more recently variants of Si-O-N have been exploited in metal-oxide-semiconductor field effect transistor (MOSFET) technology, due to the stable high quality Si-SiO2 interface achievable, and excellent electrical isolation properties. Shrinking of the transistor feature size in each new 'generation' of devices, has forced the gate dielectric thickness to be reduced, to the nanometre-scale level where direct electron tunnelling effects and high leakage currents present serious obstacles to future device reliability. These 'generations' are commonly described by 'nodes' determined by the half pitch between two CMOS gate contact or first metal level. While 90nm node technologies are in industrial production, 65nm node technologies are in advanced status of industrial development and expected to enter in full production in 2007 at the latest. To move to the 45nm node and beyond, the use of materials with a higher dielectric constant (k) (cf. SiO2 derivatives) allows an equivalent capacitance to be achieved in a physically thicker insulating layer, providing reduced leakage currents. This is a multidisciplinary project with the ultimate objective of developing novel liquid injection atomic layer deposition (ALD) process technologies for the manufacture of next generation gate dielectric thin films. The principal aims of the project are therefore to develop an ALD process based on volatile cyclopentadienyl precursors for deposition of hafnium and rare-earth metal oxides, and to assess the physico-chemical and electronic properties of the resulting high-? dielectric films for semiconductor applications.