Liquid injection ALD of Cp- based precursors for deposition of dielectric materials

自20世纪80年代末S以来，硅基微电子行业的快速发展推动了对更强大的集成电路功能和更低成本改善性能的需求。这需要增加电路密度，这已经通过场效应晶体管(FET)的尺寸的持续减小或缩放来实现。在金属氧化物半导体场效应晶体管(MOSFET)技术中，由于可以实现稳定的高质量的Si-SiO_2界面和良好的电隔离性能，以前的非晶态SiO_2和最近的Si-O-N的变体已经被利用。每一代新器件中晶体管特征尺寸的缩小迫使栅电介质厚度减小到纳米级，其中直接电子隧道效应和高泄漏电流对未来器件的可靠性构成了严重障碍。这些“代”通常由“节点”来描述，该节点由两个CMOS门接触或第一金属电平之间的半节距确定。在90 nm节点技术处于工业化生产阶段的同时，65 nm节点技术处于产业发展的高级状态，预计最晚将于2007年全面投产。为了移动到45 nm及以上的节点，使用具有较高介电常数(K)的材料(参见二氧化硅衍生物)允许在物理上更厚的绝缘层中实现等效电容，从而提供更低的泄漏电流。这是一个多学科项目，最终目标是开发新的液体注入原子层沉积(ALD)工艺技术，用于制造下一代栅电介质薄膜。因此，该项目的主要目标是开发一种基于挥发性环戊二烯基前驱体的ALD工艺，用于沉积Hf和稀土金属氧化物，并评估由此产生的高？用于半导体应用的介电薄膜。

The rapid growth of the silicon-based microelectronics industry since the late 1980's has fuelled a demand for greater integrated circuit functionality and improved performance at lower cost. This requires an increased circuit density, which has been achieved by a continual reduction, or scaling , in the dimensions of the field effect transistor (FET). Previously amorphous SiO2 and more recently variants of Si-O-N have been exploited in metal-oxide-semiconductor field effect transistor (MOSFET) technology, due to the stable high quality Si-SiO2 interface achievable, and excellent electrical isolation properties. Shrinking of the transistor feature size in each new 'generation' of devices, has forced the gate dielectric thickness to be reduced, to the nanometre-scale level where direct electron tunnelling effects and high leakage currents present serious obstacles to future device reliability. These 'generations' are commonly described by 'nodes' determined by the half pitch between two CMOS gate contact or first metal level. While 90nm node technologies are in industrial production, 65nm node technologies are in advanced status of industrial development and expected to enter in full production in 2007 at the latest. To move to the 45nm node and beyond, the use of materials with a higher dielectric constant (k) (cf. SiO2 derivatives) allows an equivalent capacitance to be achieved in a physically thicker insulating layer, providing reduced leakage currents. This is a multidisciplinary project with the ultimate objective of developing novel liquid injection atomic layer deposition (ALD) process technologies for the manufacture of next generation gate dielectric thin films. The principal aims of the project are therefore to develop an ALD process based on volatile cyclopentadienyl precursors for deposition of hafnium and rare-earth metal oxides, and to assess the physico-chemical and electronic properties of the resulting high-? dielectric films for semiconductor applications.