Modelling of Carrier Transport in Ultra Thin Body Transistors

超薄体晶体管中载流子传输的建模

• 批准号: EP/D070236/1
• 负责人: Karol Kalna
• 金额: $ 66.92万
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Fellowship
• 财政年份: 2007
• 资助国家: 英国
• 起止时间: 2007 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FD070236%2F1
• 关键词: Modelling; Carrier; Transport; Ultra; Thin

Aggressive scaling of the conventional metal-oxide-semiconductor field effect transistors is required by the International Technology Roadmap for Semiconductors as conventional devices will hit a limit beyond the 45 nm technology node. Novel, ultra-thin body transistors must be introduced into production in order to sustain the expected increase in device performance. Moreover, both the Silicon device body and the SiO2 dielectric have to be replaced with a higher mobility semiconductor and higher dielectric constant materials.The proposed fellowship research aims to develop a 'state-of-art' Monte Carlo device simulator which is capable of accurately modelling the low-dimensional properties of ultra-thin body transistors. The simulator will be employed to optimise the ultra-thin body architecture, to benchmark the prospective high mobility materials, and to investigate the impact of high-K dielectrics on channel mobility. It will also focus on the exploitation of different material crystal orientations in the channel. The accompanying research grant proposal aims to establish a new Monte Carlo simulation tool and enhancing the collaborators' Non-Equilibrium Green Functions simulator employed in the investigation of nanowire transistors.

国际半导体技术路线图要求传统的金属氧化物半导体场效应晶体管大幅缩小，因为传统器件将达到45纳米技术节点以上的极限。为了维持器件性能的预期增长，必须引入新颖的超薄体晶体管。此外，硅器件本体和SiO2介电材料都必须替换为更高迁移率的半导体和更高介电常数的材料。提议的奖学金研究旨在开发一种“最先进的”蒙特卡罗器件模拟器，能够准确地模拟超薄体晶体管的低维特性。该模拟器将用于优化超薄车身结构，对未来的高迁移率材料进行基准测试，并研究高k介电体对通道迁移率的影响。它也将侧重于开发不同的材料晶体取向的通道。随附的研究资助提案旨在建立一个新的蒙特卡罗模拟工具，并加强合作者在纳米线晶体管研究中使用的非平衡格林函数模拟器。

项目成果

MOSFETs: Properties, Preparations & Performance

MOSFET：特性、制备

• 发表时间: 2008
• 作者: Andre Noah T

MONTE CARLO SIMULATIONS OF In 0.75 Ga 0.25 As MOSFETs AT 0.5 V SUPPLY VOLTAGE FOR HIGH-PERFORMANCE CMOS

高性能 CMOS 在 0.5 V 电源电压下 In 0.75 Ga 0.25 As MOSFET 的蒙特卡洛模拟

• DOI: 10.1142/s0129156409006126
• 发表时间: 2011
• 期刊: International Journal of High Speed Electronics and Systems
• 作者: AYUBI-MOAK J

Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs

界面态陷阱密度对 n 型、增强型、无注入 In0.3Ga0.7As MOSFET 特性的影响

• DOI: 10.1016/j.mee.2009.03.024
• 发表时间: 2009
• 期刊: Microelectronic Engineering
• 影响因子: 2.3
• 作者: Ayubi-Moak J

Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study

• DOI: 10.1002/pssc.200880858
• 发表时间: 2009-06
• 期刊: Physica Status Solidi (c)
• 作者: D. Baláž;K. Kalna;Martin Kuball;M. Uren;A. Asenov

Impurity potential induced resonances in doped Si nanowire: A NEGF approach

掺杂硅纳米线中的杂质电势诱导共振：NEGF 方法

• 作者: Antonio Martinez (Author)