Nanoscale structure and device fabrication by nanoimprint lithography
Nanoscale structure and device fabrication by nanoimprint lithography
批准号:
372791-2009
负责人:
Cui, Bo
金额:
$1.53万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2009
资助国家:
加拿大
项目状态:
已结题
起止时间:
2009-01-01 至 2010-12-31
中文摘要
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英文摘要
Nanoscale science and technology is one of the fastest growing research areas in recent years. Nanostructures or devices are typically fabricated by lithography, etching and thin film deposition techniques. Among various nano-lithographic technologies, nanoimprint lithography (NIL) is the choice for high throughput patterning of nanostructures. Similar to CD/DVD duplication process, it is based on mechanical hot embossing principle onto thermoplastic polymers that become soft when heated (thermal NIL). Another popular form of NIL is based on ultraviolet light curing and hardening of a mixture called resist that consists of pre-polymers and additives (UV-NIL). Besides its high throughput, NIL has ultra high resolution of sub-5 nanometers, which is beyond the limitations set by light diffraction as in photolithography or beam scattering as in electron beam lithography. Therefore, NIL is considered as the most suitable lithography for mass production of many nano-devices.
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