Antimony-based self-organized quantum dots: epitaxial growth, characterization, and photonics at the nanoscale

锑基自组织量子点：纳米级外延生长、表征和光子学

基本信息

批准号：
355628-2008
负责人：
Mi, Zetian
金额：
$ 1.92万
依托单位：
McGill University
依托单位国家：
加拿大
项目类别：
Discovery Grants Program - Individual
财政年份：
2010
资助国家：
加拿大
起止时间：
2010-01-01 至 2011-12-31
项目状态：
已结题

来源：
https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=459488
关键词：
Antimony based self organized quantum

项目摘要

The driving forces for future technologies have increasingly relied on the exploration of novel nanoscale materials. Antimony (Sb)-based self-organized semiconductor nanostructures, such as InAs(Sb)/InGaAsSb and InSb(As)/InAs quantum dots and nanowires, a class of novel materials with tremendous importance for infrared and terahertz photonics, have remained largely unexplored. In this program, the PI will investigate the growth and fundamental characteristics of such nanostructures and develop near-, mid-, and far-infrared nanophotonic devices, providing enabling solutions for critical technologies in communications, spectroscopic sensing, medical imaging and future quantum computing. In the short-term, the PI will develop 1.55 µm InAs(Sb)/InGaAsSb quantum dot lasers and amplifiers on GaAs that can significantly outperform their quantum well counterparts, for applications in fiber optical communications. In the medium-term, the PI will investigate the epitaxial growth and characterization of Sb-based mid-infrared quantum dot heterostructures and extend, for the first time, the demonstrated InAs quantum dot technology developed by the PI and other researchers, to the mid- and far-infrared frequency ranges. The third focus is the development of novel quantum dot and nanowire heterostructures with precisely controlled properties by utilizing the novel technique of selective area growth on nano-patterned substrates, with the long-term goal is to realize electrically-injected ultrahigh-speed nanoscale lasers and high-efficiency single photon sources, fundamental building blocks for future quantum computing and information processing systems.

未来技术的驱动力越来越依赖于新型纳米级材料的探索。基于锑（SB）的自组织的半导体纳米结构，例如INAS（SB）/INGAASSB和INSB（AS）/INAS量子点和纳米线，这是一类新型的新型材料，这对于红外和Terahertz光学量非常重要。在该计划中，PI将研究此类纳米结构的增长和基本特征，并开发近，中和远红外的纳米光子设备，从而为通信，光谱传感，医学成像和未来量子计算的关键技术提供促进解决方案。在短期内，PI将在GAAS上开发1.55 µM INAS（SB）/INGAASSB量子点激光器和放大器，在光纤通信中应用，可以显着胜过其量子井孔。在中期，PI将调查基于SB的中红外量子点异质结构的外延生长和表征，并首次扩展了PI和其他研究人员开发的INAS量子点技术，并扩展到中频率和远方的频率范围。第三个重点是通过利用选择性区域增长的新技术来开发具有精确控制特性的新型量子点和纳米线异质结构，其长期目标是实现电气注射的超速度纳米级纳米级激光器和高效率的单光子构建构建型和未来的量子构建块，并进行了质量构建块。