Towards ultra-low power digital circuit design with single-electron tunneling technology

利用单电子隧道技术实现超低功耗数字电路设计

• 批准号: 249499-2012
• 负责人: Chen, Chunhong
• 金额: $ 1.31万
• 依托单位: University of Windsor
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2013
• 资助国家: 加拿大
• 起止时间: 2013-01-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=524677
• 关键词: Towards; ultra; low; power; digital

As today's electronic devices are pushed toward nanometer scale, single-electron tunneling technology (SET) plays an increasingly important role in reducing both power consumption and physical size of future electronic systems. In SET-based circuits, individual electrons can be transported in a controlled manner for both analog and digital signal processing. While the opportunities created by SET devices for technical breakthroughs in electronics are clear, circuit designers are facing a lot of practical design challenges ahead.

随着当今的电子设备向纳米级发展，单电子隧道技术（SET）在降低未来电子系统的功耗和物理尺寸方面发挥着越来越重要的作用。在基于 SET 的电路中，单个电子可以以受控方式传输，以进行模拟和数字信号处理。虽然 SET 器件为电子技术突破创造的机会是显而易见的，但电路设计人员仍面临着许多实际的设计挑战。