Deep-level mediated optical functionality in silicon (SOI) waveguides enabling scalable optical interconnection

硅 (SOI) 波导中的深层介导光学功能可实现可扩展的光学互连

• 批准号: 446981-2013
• 负责人: Knights, Andrew
• 金额: $ 9.11万
• 依托单位: McMaster University
• 依托单位国家: 加拿大
• 项目类别: Idea to Innovation
• 财政年份: 2013
• 资助国家: 加拿大
• 起止时间: 2013-01-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=536634
• 关键词: Deep; level; mediated; optical; functionality

This proposal outlines a plan for development of optical functionality on a silicon chip following recent inventions by the Silicon Photonics Research Group (SPRG) at McMaster University. Specifically we wish to expand our work on monolithic, highly integrated chips for use in extreme data rate transmission up to and beyond Terabit sec-1. Our approach to chip fabrication relies upon the use of deep-levels (>3kT in energy from either band edge) in the silicon band-gap to provide photo-detection and temperature insensitive optical modulation. This functionality is achieved without recourse to hybridization of III-V material or germanium. The immediate application for these devices is short reach optical links (optical interconnection) primarily associated with data centres, a market which is estimated to be worth >$1B by 2015.

这项提案概述了麦克马斯特大学硅光子学研究小组(SPRG)最近的发明之后，在硅芯片上开发光学功能的计划。具体地说，我们希望扩大我们在单片、高度集成芯片方面的工作，用于达到或超过太比特秒-1的极端数据速率传输。我们的芯片制造方法依赖于使用硅带隙中的深能级(来自两个带边的3KT能量)来提供光检测和温度不敏感的光学调制。这种功能的实现不需要III-V材料或Ge的杂交。这些设备的直接应用是主要与数据中心相关的短距离光纤链路(光互连)，据估计，到2015年，这个市场的价值将达到10亿美元。