Band-gap modification applied to the development of silicon photonic devices
Band-gap modification applied to the development of silicon photonic devices
批准号:
288302-2012
负责人:
Knights, Andrew
金额:
$2.4万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2015
资助国家:
加拿大
项目状态:
已结题
起止时间:
2015-01-01 至 2016-12-31
中文摘要
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英文摘要
This proposal relates to the development of integrated optical circuits (IOCs); specifically those fabricated on a silicon substrate in a manner which is compatible with the manufacture of silicon devices used in the production of micro- and nano-electronics. This area of research, commonly referred to as 'silicon photonics', promises highly integrated devices with both optical and electronic functionality. The global silicon photonics research effort has a continuing impact on information transfer, storage and processing in areas such as optical interconnects, telecommunications and sensing.
In the current work we will use an approach of physical enquiry of fundamentals, model development, device design and fabrication, and ultimately high-level integration. Both specific and novel to our proposal is the use of band-gap modification of silicon to enhance and enable photonic functionality not normally associated with this semiconductor. (1) We will fabricate devices to perform the conversion of information from the optical to the electrical domain at the important communication wavelength of 1550nm. The conversion rate will take place at a frequency of ten's of GHz. (2) We will 'trim' the response of resonant devices, negating the requirement for individual, thermally tuned structures and thus drastically reduce the cost of manufacture. (3) We will develop a novel optical modulation technique which uses the charge state of deep-band levels to encode information with extreme efficiency. (4) We will explore the use of low-dimensional silicon and silicate thin films for applications in light emission and solid state lighting. These four broad projects are suitable for graduate student training, as described in detail in the full proposal.
Our devices will be fabricated using the limitations provided by the silicon manufacturing industry. In this way, any and all successful developments have potential for exploitation in a scalable paradigm.
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批准号:RGPIN-2017-04696
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资助金额:$6.85万
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财政年份:2020
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负责人:Knights, Andrew
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依托单位:
Materials and Device Development for Silicon-based Optoelectronics
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批准号:RGPIN-2017-04696
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.42万
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财政年份:2020
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负责人:Knights, Andrew
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依托单位:
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批准号:RGPIN-2017-04696
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资助金额:$3.42万
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依托单位:
Strategies for the scalable fabrication, characterization and processing of graphene and other technologically important 2-D films
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资助金额:$3.95万
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依托单位:
Provision of Open-Access Positron Beam Spectroscopy to Canadian Universities (OPEN-POS)
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批准号:RTI-2020-00461
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项目类别:Research Tools and Instruments
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财政年份:2019
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负责人:Knights, Andrew
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依托单位:
Materials and Device Development for Silicon-based Optoelectronics
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批准号:RGPIN-2017-04696
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.42万
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财政年份:2018
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负责人:Knights, Andrew
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依托单位:
Amplified silicon photonics
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批准号:494306-2016
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项目类别:Strategic Projects - Group
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资助金额:$10.49万
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财政年份:2018
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负责人:Knights, Andrew
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依托单位:
Focused Ion Beam de-Layering and Device Modification of Electronic and Photonic Circuits**
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批准号:536987-2018
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2018
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负责人:Knights, Andrew
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依托单位:
Materials and Device Development for Silicon-based Optoelectronics
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批准号:RGPIN-2017-04696
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.42万
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财政年份:2017
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负责人:Knights, Andrew
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依托单位:
Amplified silicon photonics
-
批准号:494306-2016
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项目类别:Strategic Projects - Group
-
资助金额:$13.33万
-
财政年份:2017
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负责人:Knights, Andrew
-
依托单位:
The Development and Application of Doping Technologies in the Applied Nanotools Electron-Beam Lithography based Silicon Photonic Platform (NanoSOI)
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批准号:501623-2016
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2016
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负责人:Knights, Andrew
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依托单位:
Tunable Laser Source and Optical Spectrum Analyzer for the Mid-IR
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批准号:RTI-2017-00474
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项目类别:Research Tools and Instruments
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资助金额:$6.5万
-
财政年份:2016
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负责人:Knights, Andrew
-
依托单位:
Band-gap modification applied to the development of silicon photonic devices
-
批准号:288302-2012
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2016
-
负责人:Knights, Andrew
-
依托单位:
Band-gap modification applied to the development of silicon photonic devices
-
批准号:288302-2012
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2014
-
负责人:Knights, Andrew
-
依托单位:
Deep-level mediated optical functionality in silicon (SOI) waveguides enabling scalable optical interconnection
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批准号:446981-2013
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项目类别:Idea to Innovation
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资助金额:$9.11万
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财政年份:2013
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负责人:Knights, Andrew
-
依托单位:
Band-gap modification applied to the development of silicon photonic devices
-
批准号:288302-2012
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2013
-
负责人:Knights, Andrew
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依托单位:
Design, fabrication and test of a silicon-based tuneable filter for integration with a comb laser
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批准号:444944-2012
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项目类别:Engage Grants Program
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资助金额:$1.82万
-
财政年份:2012
-
负责人:Knights, Andrew
-
依托单位:
Band-gap modification applied to the development of silicon photonic devices
-
批准号:288302-2012
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2012
-
负责人:Knights, Andrew
-
依托单位:
Travel to Enablence and One Chip Semiconductor in Ottawa to develop new collaborations
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批准号:429641-2011
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项目类别:Interaction Grants Program
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资助金额:$0.34万
-
财政年份:2011
-
负责人:Knights, Andrew
-
依托单位:
国内基金
海外基金
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