Band-gap modification applied to the development of silicon photonic devices

带隙修改应用于硅光子器件的开发

• 批准号: 288302-2012
• 负责人: Knights, Andrew
• 金额: $ 2.4万
• 依托单位: McMaster University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2013
• 资助国家: 加拿大
• 起止时间: 2013-01-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=525774
• 关键词: Band; gap; modification; applied; development

This proposal relates to the development of integrated optical circuits (IOCs); specifically those fabricated on a silicon substrate in a manner which is compatible with the manufacture of silicon devices used in the production of micro- and nano-electronics. This area of research, commonly referred to as 'silicon photonics', promises highly integrated devices with both optical and electronic functionality. The global silicon photonics research effort has a continuing impact on information transfer, storage and processing in areas such as optical interconnects, telecommunications and sensing.

本提案涉及集成光电路（IOCs）的发展；具体地说，在硅衬底上以与用于微电子和纳米电子学生产的硅器件的制造相容的方式制造的那些。这一研究领域通常被称为“硅光子学”，有望实现具有光学和电子功能的高度集成设备。全球硅光子学的研究工作对信息传输、存储和处理等领域产生了持续的影响，如光互连、电信和传感。