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Band-gap modification applied to the development of silicon photonic devices

Band-gap modification applied to the development of silicon photonic devices
带隙修改应用于硅光子器件的开发
批准号:
288302-2012
负责人:
Knights, Andrew
金额:
$2.4万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2012
资助国家:
加拿大
项目状态:
已结题
起止时间:
2012-01-01 至 2013-12-31

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中文摘要
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英文摘要
This proposal relates to the development of integrated optical circuits (IOCs); specifically those fabricated on a silicon substrate in a manner which is compatible with the manufacture of silicon devices used in the production of micro- and nano-electronics. This area of research, commonly referred to as 'silicon photonics', promises highly integrated devices with both optical and electronic functionality. The global silicon photonics research effort has a continuing impact on information transfer, storage and processing in areas such as optical interconnects, telecommunications and sensing.
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