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Controlling the forming and switching characteristics of non-volatile resistive memory devices using ion-implantation

Controlling the forming and switching characteristics of non-volatile resistive memory devices using ion-implantation
使用离子注入控制非易失性电阻存储器件的形成和切换特性
批准号:
LP120100272
负责人:
Prof Robert Elliman
金额:
$24.02万
依托单位国家:
澳大利亚
项目类别:
Linkage Projects
财政年份:
2012
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2012-01-01 至 2016-12-31

项目摘要

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中文摘要
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英文摘要
This project will develop new techniques for improving the reliability and endurance of a new class of non-volatile memory devices for use in portable electronics and embedded electronic systems. Such developments are essential for the development of next-generation devices.
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Electrical contact engineering for next generation semiconductor devices
  • 批准号:
    LP190100010
  • 项目类别:
    Linkage Projects
  • 资助金额:
    $21.79万
  • 财政年份:
    2021
  • 负责人:
    Prof Robert Elliman
  • 依托单位:
Ion-beam synthesis of functional oxides for next generation memory devices
  • 批准号:
    LP150100693
  • 项目类别:
    Linkage Projects
  • 资助金额:
    $28.52万
  • 财政年份:
    2016
  • 负责人:
    Prof Robert Elliman
  • 依托单位:
Understanding and improving resistive-switching in hafnium-oxide-based high-k dielectrics for non-volatile memory applications
  • 批准号:
    DP120101101
  • 项目类别:
    Discovery Projects
  • 资助金额:
    $21.52万
  • 财政年份:
    2012
  • 负责人:
    Prof Robert Elliman
  • 依托单位:
Switching mechanisms in nonvolatile resistive memory using high-k dielectrics
  • 批准号:
    LP0989488
  • 项目类别:
    Linkage Projects
  • 资助金额:
    $13.75万
  • 财政年份:
    2009
  • 负责人:
    Prof Robert Elliman
  • 依托单位:
国内基金
海外基金
Accretion variability and its consequences: from protostars to planet-forming disks
  • 批准号:
    12173003
  • 项目类别:
    面上项目
  • 资助金额:
    60万元
  • 批准年份:
    2021
  • 负责人:
    沈雷歌
  • 依托单位: