The Physical and Optical Properties of Self-Assembled Si Nanocrystals

自组装硅纳米晶的物理和光学性质

基本信息

  • 批准号:
    DP0343279
  • 负责人:
  • 金额:
    $ 23.34万
  • 依托单位:
  • 依托单位国家:
    澳大利亚
  • 项目类别:
    Discovery Projects
  • 财政年份:
    2003
  • 资助国家:
    澳大利亚
  • 起止时间:
    2003-10-31 至 2007-10-31
  • 项目状态:
    已结题

项目摘要

The properties of nano-scale materials can differ significantly from those of their bulk counterparts. As such, they can provide materials with new and novel properties as well as proving a useful test of modern theories. An outstanding example of the significance of such effects is provided by quantum confined silicon structures, such as porous or nanocrystalline silicon, which exhibit luminescence efficiencies up to a million times greater than bulk silicon. This project aims to understand the novel optical properties and interactions that underpin potential applications of this technologically important material.
纳米级材料的性质与它们的块状材料有很大的不同。因此,它们可以提供具有新颖特性的材料,并为现代理论提供有用的检验。量子限制硅结构(如多孔硅或纳米晶硅)提供了这种效应重要性的一个突出例子,它们的发光效率比体硅高100万倍。该项目旨在了解支撑这种技术重要材料潜在应用的新型光学特性和相互作用。

项目成果

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Prof Robert Elliman其他文献

Prof Robert Elliman的其他文献

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{{ truncateString('Prof Robert Elliman', 18)}}的其他基金

Electrical contact engineering for next generation semiconductor devices
下一代半导体器件的电接触工程
  • 批准号:
    LP190100010
  • 财政年份:
    2021
  • 资助金额:
    $ 23.34万
  • 项目类别:
    Linkage Projects
Ion-beam synthesis of functional oxides for next generation memory devices
用于下一代存储器件的功能氧化物的离子束合成
  • 批准号:
    LP150100693
  • 财政年份:
    2016
  • 资助金额:
    $ 23.34万
  • 项目类别:
    Linkage Projects
Controlling the forming and switching characteristics of non-volatile resistive memory devices using ion-implantation
使用离子注入控制非易失性电阻存储器件的形成和切换特性
  • 批准号:
    LP120100272
  • 财政年份:
    2012
  • 资助金额:
    $ 23.34万
  • 项目类别:
    Linkage Projects
Understanding and improving resistive-switching in hafnium-oxide-based high-k dielectrics for non-volatile memory applications
了解和改进非易失性存储器应用中氧化铪基高 k 电介质的电阻开关
  • 批准号:
    DP120101101
  • 财政年份:
    2012
  • 资助金额:
    $ 23.34万
  • 项目类别:
    Discovery Projects
Switching mechanisms in nonvolatile resistive memory using high-k dielectrics
使用高 k 电介质的非易失性电阻存储器中的开关机制
  • 批准号:
    LP0989488
  • 财政年份:
    2009
  • 资助金额:
    $ 23.34万
  • 项目类别:
    Linkage Projects
Charge transport and trapping in high-k dielectric films containing self-assembled nanocrystals
含有自组装纳米晶体的高 k 介电薄膜中的电荷传输和捕获
  • 批准号:
    DP0878086
  • 财政年份:
    2008
  • 资助金额:
    $ 23.34万
  • 项目类别:
    Discovery Projects
Improved understanding of nanoscale materials - structure, composition, crystallography and defects revealed by electron imaging and analysis at high spatial resolution
提高对纳米级材料的理解——通过高空间分辨率的电子成像和分析揭示的结构、成分、晶体学和缺陷
  • 批准号:
    LE0775729
  • 财政年份:
    2007
  • 资助金额:
    $ 23.34万
  • 项目类别:
    Linkage Infrastructure, Equipment and Facilities
Self-assembled semiconductor nanocrystals as functional materials for microelectronics, optoelectronics and photonics
自组装半导体纳米晶作为微电子、光电子和光子学的功能材料
  • 批准号:
    DP0771158
  • 财政年份:
    2007
  • 资助金额:
    $ 23.34万
  • 项目类别:
    Discovery Projects
Implant Isolation of III-V Compound Semiconductor Devices and Structures
III-V 化合物半导体器件和结构的注入隔离
  • 批准号:
    LP0561927
  • 财政年份:
    2005
  • 资助金额:
    $ 23.34万
  • 项目类别:
    Linkage Projects
Novel Silicon-Based Photonic Devices
新型硅基光子器件
  • 批准号:
    DP0343308
  • 财政年份:
    2003
  • 资助金额:
    $ 23.34万
  • 项目类别:
    Discovery Projects

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