Ion-beam synthesis of functional oxides for next generation memory devices

点击翻译按钮获取中文摘要

This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitable for non-volatile memory applications. However, their electrical response depends critically on stoichiometry and this must be precisely engineered for optimal device performance. This project aims to develop next-generation memory devices as a replacement for current flash memory. The proposed technology uses resistance changes in functional-oxides to store information, and offers the potential for smaller and faster memory.