Ion-beam synthesis of functional oxides for next generation memory devices

本项目旨在探索一种利用直接氧化物合成和基于离子注入（常规半导体制造工艺）的缺陷工程来控制化学计量的低温方法。这有可能提高设备的可制造性和功能性。在薄膜形式中，过渡金属氧化物可以经受强电场并且表现出适合于非易失性存储器应用的特性电阻变化。然而，它们的电响应关键取决于化学计量，这必须精确设计以获得最佳器件性能。该项目旨在开发下一代存储设备，以取代当前的闪存。 这项技术利用功能氧化物的电阻变化来存储信息，并提供了更小更快的存储器的潜力。

This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitable for non-volatile memory applications. However, their electrical response depends critically on stoichiometry and this must be precisely engineered for optimal device performance. This project aims to develop next-generation memory devices as a replacement for current flash memory. The proposed technology uses resistance changes in functional-oxides to store information, and offers the potential for smaller and faster memory.