Implant Isolation of III-V Compound Semiconductor Devices and Structures

III-V 化合物半导体器件和结构的注入隔离

• 批准号: LP0561927
• 负责人: Prof Robert Elliman
• 金额: $ 14.57万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Projects
• 财政年份: 2005
• 资助国家: 澳大利亚
• 起止时间: 2005-12-14 至 2007-07-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LP0561927
• 关键词: Implant; Isolation; III; Compound; Semiconductor

Individual devices in an integrated circuit can be electrically isolated from each other by irradiating the materials between them with high energy ions. This creates defects in the semiconductor that trap charge carriers and thereby increase the resistance of the material. However, the effectiveness of this process depends on the material as well as irradiation and post-irradiation processing conditions. This project aims to develop an implant isolation scheme for a new class of devices developed by Epitactix, an Australian start-up company founded on CSIRO research. This will be achieved by combining the ANU's experience and expertise in ion-irradiation and defect engineering with the device and processing expertise of Epitactix Pty Ltd.

集成电路中的各个器件可以通过用高能离子照射它们之间的材料而彼此电隔离。这在半导体中产生了缺陷，这些缺陷捕获电荷载流子，从而增加了材料的电阻。 然而，该过程的有效性取决于材料以及辐照和辐照后处理条件。该项目旨在为Epitactix开发的一类新器件开发植入隔离方案，Epitactix是一家基于CSIRO研究成立的澳大利亚初创公司。这将通过将ANU在离子辐照和缺陷工程方面的经验和专业知识与Epitactix Pty Ltd的设备和处理专业知识相结合来实现。