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Switching mechanisms in nonvolatile resistive memory using high-k dielectrics

Switching mechanisms in nonvolatile resistive memory using high-k dielectrics
使用高 k 电介质的非易失性电阻存储器中的开关机制
批准号:
LP0989488
负责人:
Prof Robert Elliman
金额:
$13.75万
依托单位国家:
澳大利亚
项目类别:
Linkage Projects
财政年份:
2009
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2009-01-01 至 2011-12-31

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中文摘要
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英文摘要
Growth in the use of portable electronic devices, such as cameras, phones and MP3 players has resulted in an increased demand for low-power, high-density, non-volatile memory (NVM). One class of such memories aims to use resistance changes in thin dielectric films as a means of storing information. This project aims to develop a better understanding of these devices and to develop new and innovative processes for controlling data storage. The project is based on collaboration between researchers at the ANU and Silanna, an Australian start-up company aiming to develop and commercialise such technology.
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