Switching mechanisms in nonvolatile resistive memory using high-k dielectrics

使用高 k 电介质的非易失性电阻存储器中的开关机制

• 批准号: LP0989488
• 负责人: Prof Robert Elliman
• 金额: $ 13.75万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Projects
• 财政年份: 2009
• 资助国家: 澳大利亚
• 起止时间: 2009-01-01 至 2011-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LP0989488
• 关键词: Switching; mechanisms; nonvolatile; resistive; memory

Growth in the use of portable electronic devices, such as cameras, phones and MP3 players has resulted in an increased demand for low-power, high-density, non-volatile memory (NVM). One class of such memories aims to use resistance changes in thin dielectric films as a means of storing information. This project aims to develop a better understanding of these devices and to develop new and innovative processes for controlling data storage. The project is based on collaboration between researchers at the ANU and Silanna, an Australian start-up company aiming to develop and commercialise such technology.

诸如照相机、电话和MP3播放器之类的便携式电子设备的使用的增长导致了对低功率、高密度、非易失性存储器（NVM）的需求的增加。 一类这样的存储器旨在使用薄介电膜中的电阻变化作为存储信息的手段。 该项目旨在更好地了解这些设备，并开发用于控制数据存储的新的创新流程。 该项目是基于澳大利亚国立大学和Silanna的研究人员之间的合作，Silanna是一家澳大利亚初创公司，旨在开发和商业化这种技术。