Electrical contact engineering for next generation semiconductor devices

下一代半导体器件的电接触工程

• 批准号: LP190100010
• 负责人: Prof Robert Elliman
• 金额: $ 21.79万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Projects
• 财政年份: 2021
• 资助国家: 澳大利亚
• 起止时间: 2021-01-01 至 2023-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LP190100010
• 关键词: Electrical; contact; engineering; next; generation

Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconductor interfaces; determining how ultra-shallow dopant profiles are affected by device structure and processing; and developing improved methods for measuring ultra-low contact resistivity. The research will be undertaken as a collaboration between researchers at the Australian National University and Applied Materials Ltd.

接触电阻率和寄生电阻已被确定为下一代半导体器件性能的限制因素。该项目旨在了解这些限制，并开发通过应用先进的离子注入工艺来减轻这些限制的方法。具体而言，这将涉及：调查选择性掺杂对金属-半导体界面电性能的影响;确定超浅掺杂剂分布如何受到器件结构和工艺的影响;以及开发用于测量超低接触电阻率的改进方法。这项研究将由澳大利亚国立大学和应用材料有限公司的研究人员合作进行。