Establishing protocols for fast, non-destructive, and large-area mapping of strain in semiconductor materials and devices

建立半导体材料和器件中快速、无损、大面积应变绘图的协议

• 批准号: 483614-2015
• 负责人: Moutanabbir, Oussama
• 金额: $ 1.82万
• 依托单位: École Polytechnique de Montréal
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2015
• 资助国家: 加拿大
• 起止时间: 2015-01-01 至 2016-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=583749
• 关键词: Establishing; protocols; fast; non; destructive

Strain engineering has been a powerful strategy in fabrication and processing of a variety of electronic, optoelectronic, and photovoltaic devices. To implement these technologies, several processes have been proposed to generate strain in semiconductors in order to improve and control their physical properties by exploiting the influence of strain on the bandgap structure. The increasing importance of this strain-induced bandgap engineering in design and fabrication of devices has raised significant challenges at both fabrication and characterization levels. The latter in particular has sparked a surge of interest in developing a variety of spectroscopic and microscopic techniques to precisely probe strain and stress in ultra small semiconductor devices and structures. Up to date, conventional strain characterization techniques suffer from a number of limitations that prevent their use in routine inspection in semiconductor device production lines. This project addresses this very issue by establishing a fast, non-destructive, and large area mapping of strain in a variety of technologically important semiconductor materials and devices. This process will be implemented by improving the newly developed Photon etc.'s system for Raman Imaging (RIMA). Through this project we will expand the capabilities of this instrument to address materials and devices inspection issues that are of critical importance for electronic, optoelectronic, photovoltaic applications. A precise study of strain in semiconductor materials will provide Photon etc. with a strong asset to develop new market opportunities in semiconductor industry.

应变工程已经成为制造和处理各种电子、电子器件和材料的有力策略， 光电和光伏器件。为了实施这些技术，已经实施了几个过程。 提出在半导体中产生应变，以便通过以下方式改善和控制它们的物理性质： 利用应变对带隙结构的影响。这种应变引起的 在器件的设计和制造中的带隙工程在制造和制造方面都提出了重大的挑战 和表征水平。特别是后者，引发了人们对开发各种 精确探测超小型半导体中应变和应力的光谱和显微技术 设备和结构。迄今为止，常规的应变表征技术受到许多缺陷的影响。 这些限制阻止了它们在半导体器件生产线中的常规检查中的使用。 该项目通过建立一个快速，非破坏性和大面积的应变映射来解决这个问题， 各种技术上重要的半导体材料和器件。这一进程将在 通过改进新开发的Photon等。的系统进行拉曼成像（RIMA）。通过这个项目，我们 将扩大这一工具的能力，以解决材料和设备的检查问题， 对于电子、光电、光伏应用至关重要。一个精确的应变研究 半导体材料将为Photon等提供强大的资产，以开发新的市场机会， 半导体行业。