Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials

点击翻译按钮获取中文摘要

The main objective of this Research Program is to establish new electronic materials and devices with tunable properties that are a consequence of nanoscale and quantum processes. The proposed Program is organized in three major axes: (1) Isotopically programmed one-dimensional nanostructures; (2) Non-equilibrium group IV quantum structures; and (3) Non-zero bandgap two-dimensional materials. The first research axis will create new frontiers in the field of nanowires and implement a new generation of nanowire-based devices by exploiting the difference in the physical properties between stable isotopes. The precise manipulation of different isotopes in individual group IV semiconductor nanowires will enable nanodevices with controlled nuclear spin distribution. The isotope-induced mass disorder will also be exploited to engineer the thermal conductivity within a single nanoscale device. The second research axis will capitalize on the development of direct bandgap, tin-containing group IV semiconductors to establish a novel family of quantum structures and devices to study the effects of intra-cavity coherent photon intensity on photon-assisted tunneling. The third research axis aims at establishing protocols to implement new two-dimensional materials made of group V elements. These materials exhibit quantum confinement and enhanced transport properties similar to graphene, in addition to a non-zero bandgap which makes them relevant for electronic and optoelectronic applications. The fundamental paradigm at the core of these research axes is the capability to tailor the physical properties through a precise, atomistic-level control of structure and composition during the epitaxial growth. New experimental methods are proposed to study and control surface and interface processes leading to these new classes of electronic materials. These material systems will provide a rich playground to systematically investigate some of the most exciting fundamental phenomena and problems in materials physics including nanoscale heat transport, nuclear spin dynamics, quantum tunneling, and quantum confinement. This Program will also lay the groundwork for collaborative, multi-disciplinary, and integrated research to control and harness these phenomena in innovative devices such as thermal diodes and transistors, quantum memories, and light emitting transistors. The results of this research will have immediate impacts on semiconductor science and technology and pave the way to new, high-performance applications in information technology, clean energy, and precise metrology. Progress in nanoscale and quantum technologies is crucial to ensure global competitiveness of the Canadian industry, which is in an excellent position to benefit from trained highly qualified personnel and locally generated intellectual properties.