Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials

本研究计划的主要目标是建立具有纳米级和量子过程可调特性的新型电子材料和器件。该程序主要分为三个方面：(1)同位素编程的一维纳米结构；(2)非平衡族IV量子结构；(3)非零带隙二维材料。第一个研究轴将在纳米线领域开创新的前沿，并通过利用稳定同位素之间物理性质的差异来实现新一代基于纳米线的设备。对不同同位素在第四族半导体纳米线中的精确操作，将使纳米器件具有可控的核自旋分布。同位素诱导的质量紊乱也将被用于设计单个纳米级器件的导热性。第二个研究轴将利用直接带隙含锡IV族半导体的发展来建立一个新的量子结构和器件家族，以研究腔内相干光子强度对光子辅助隧道的影响。第三个研究轴旨在建立V族元素构成的新型二维材料的实现方案。这些材料表现出类似于石墨烯的量子约束和增强的输运特性，此外还有非零带隙，这使得它们与电子和光电子应用相关。

The main objective of this Research Program is to establish new electronic materials and devices with tunable properties that are a consequence of nanoscale and quantum processes. The proposed Program is organized in three major axes: (1) Isotopically programmed one-dimensional nanostructures; (2) Non-equilibrium group IV quantum structures; and (3) Non-zero bandgap two-dimensional materials. The first research axis will create new frontiers in the field of nanowires and implement a new generation of nanowire-based devices by exploiting the difference in the physical properties between stable isotopes. The precise manipulation of different isotopes in individual group IV semiconductor nanowires will enable nanodevices with controlled nuclear spin distribution. The isotope-induced mass disorder will also be exploited to engineer the thermal conductivity within a single nanoscale device. The second research axis will capitalize on the development of direct bandgap, tin-containing group IV semiconductors to establish a novel family of quantum structures and devices to study the effects of intra-cavity coherent photon intensity on photon-assisted tunneling. The third research axis aims at establishing protocols to implement new two-dimensional materials made of group V elements. These materials exhibit quantum confinement and enhanced transport properties similar to graphene, in addition to a non-zero bandgap which makes them relevant for electronic and optoelectronic applications.