Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials

该研究计划的主要目标是建立新的电子材料和器件，这些材料和器件具有可调特性，这些特性是纳米级和量子过程的结果。该计划分为三个主轴：（1）同位素编程一维纳米结构;（2）非平衡IV族量子结构;（3）非零带隙二维材料。第一个研究轴将在纳米线领域创造新的前沿，并通过利用稳定同位素之间物理性质的差异来实现新一代基于纳米线的设备。精确操纵单个IV族半导体纳米线中的不同同位素将使纳米器件具有受控的核自旋分布。同位素诱导的质量无序也将被用来设计单个纳米级器件内的热导率。第二个研究轴将利用直接带隙，含锡的第四族半导体的发展，建立一个新的家庭的量子结构和设备，研究腔内相干光子强度对光子辅助隧穿的影响。第三个研究轴旨在建立协议，以实现由V族元素制成的新二维材料。这些材料表现出类似于石墨烯的量子限制和增强的传输特性，除了非零带隙之外，这使得它们与电子和光电应用相关。* 这些研究轴核心的基本范式是通过在外延生长期间对结构和组成进行精确的原子级控制来定制物理性质的能力。提出了新的实验方法来研究和控制表面和界面过程，导致这些新的电子材料类。这些材料系统将为系统地研究材料物理学中一些最令人兴奋的基本现象和问题提供丰富的平台，包括纳米级热传输，核自旋动力学，量子隧穿和量子限制。该计划还将为合作，多学科和综合研究奠定基础，以控制和利用创新设备中的这些现象，如热二极管和晶体管，量子存储器和发光晶体管。这项研究的结果将对半导体科学和技术产生直接影响，并为信息技术、清洁能源和精确计量领域的新的高性能应用铺平道路。纳米和量子技术的进步对于确保加拿大工业的全球竞争力至关重要，加拿大工业处于有利地位，可以从训练有素的高素质人才和当地产生的知识产权中受益。

The main objective of this Research Program is to establish new electronic materials and devices with tunable properties that are a consequence of nanoscale and quantum processes. The proposed Program is organized in three major axes: (1) Isotopically programmed one-dimensional nanostructures; (2) Non-equilibrium group IV quantum structures; and (3) Non-zero bandgap two-dimensional materials. The first research axis will create new frontiers in the field of nanowires and implement a new generation of nanowire-based devices by exploiting the difference in the physical properties between stable isotopes. The precise manipulation of different isotopes in individual group IV semiconductor nanowires will enable nanodevices with controlled nuclear spin distribution. The isotope-induced mass disorder will also be exploited to engineer the thermal conductivity within a single nanoscale device. The second research axis will capitalize on the development of direct bandgap, tin-containing group IV semiconductors to establish a novel family of quantum structures and devices to study the effects of intra-cavity coherent photon intensity on photon-assisted tunneling. The third research axis aims at establishing protocols to implement new two-dimensional materials made of group V elements. These materials exhibit quantum confinement and enhanced transport properties similar to graphene, in addition to a non-zero bandgap which makes them relevant for electronic and optoelectronic applications. ***The fundamental paradigm at the core of these research axes is the capability to tailor the physical properties through a precise, atomistic-level control of structure and composition during the epitaxial growth. New experimental methods are proposed to study and control surface and interface processes leading to these new classes of electronic materials. These material systems will provide a rich playground to systematically investigate some of the most exciting fundamental phenomena and problems in materials physics including nanoscale heat transport, nuclear spin dynamics, quantum tunneling, and quantum confinement. This Program will also lay the groundwork for collaborative, multi-disciplinary, and integrated research to control and harness these phenomena in innovative devices such as thermal diodes and transistors, quantum memories, and light emitting transistors. The results of this research will have immediate impacts on semiconductor science and technology and pave the way to new, high-performance applications in information technology, clean energy, and precise metrology. Progress in nanoscale and quantum technologies is crucial to ensure global competitiveness of the Canadian industry, which is in an excellent position to benefit from trained highly qualified personnel and locally generated intellectual properties.**