Silicon-compatible hybrid organic-inorganic shortwave infrared up-conversion device

硅兼容有机-无机杂化短波红外上转换器件

基本信息

  • 批准号:
    494031-2016
  • 负责人:
  • 金额:
    $ 17.88万
  • 依托单位:
  • 依托单位国家:
    加拿大
  • 项目类别:
    Strategic Projects - Group
  • 财政年份:
    2017
  • 资助国家:
    加拿大
  • 起止时间:
    2017-01-01 至 2018-12-31
  • 项目状态:
    已结题

项目摘要

High-resolution short-wave IR (SWIR) imaging is a very attractive technology with an immense potential in applications that are currently out of the reach of the mainstream infrared imaging technologies. For instance, SWIR (1.4-3 µm) penetrates fog and smog thus enabling imaging through scattering media. SWIR sensors can also passively image even in the dark as the night-glow from the upper atmosphere naturally provides SWIR illumination. SWIR sources can be utilized to illuminate scenes and highlight features of interest, without being detected by naked eyes or conventional night vision devices. This active illumination from eye-safe lasers as well as thermal emissions from objects with temperatures above 150C can well be served by the SWIR sensors. Moreover, the strong absorbance due to molecular vibrations in the SWIR range creates a wealth of opportunities for SWIR devices in spectroscopy and biomedical applications. Current SWIR focal-plane arrays (FPA) are essentially made of InGaAs, InSb, and HgCdTe. However, the high cost and small array size of these detectors translates into an overall cost of a megapixel sensor in the SWIR regime exceeding tens of thousands dollars. This is a major limitation that prevents the broad use of SWIR technologies.This project will concentrate on developing a scalable SWIR imaging device directly integrated on silicon. We propose a novel hybrid organic-inorganic up-conversion device consisting of a direct tandem integration of an inorganic silicon-germanium-tin photodetector with an organic light emitting diode. This device is capable of converting light from the 1.4-3 µm range to visible light. This technology provides a serious potential for low cost and large size SWIR FPA operating in a broader wavelength range. This is highly desirable for many applications such as high temperature manufacturing processes, night-time surveillance, agricultural raw material cleaning and sorting, biological imaging, and plastic recycling of automotive and consumer products.
高分辨率短波红外成像是一种非常有吸引力的技术,在主流红外成像技术无法实现的应用领域有着巨大的潜力。例如,SWIR(1.4-3微米)可以穿透雾和烟雾,因此可以通过散射介质成像。SWIR传感器即使在黑暗中也可以被动成像,因为高层大气的夜间辉光自然提供SWIR照明。SWIR光源可用于照明场景和突出感兴趣的特征,而不会被肉眼或传统夜视设备检测到。SWIR传感器可以很好地为眼睛安全激光的主动照明以及温度高于150℃的物体的热排放提供服务。此外,在SWIR范围内分子振动产生的强吸收为SWIR器件在光谱学和生物医学应用中创造了大量的机会。目前的SWIR焦平面阵列基本上是由InGaAs、InSb和HgCdTe组成的。然而,这些探测器的高成本和小阵列尺寸意味着在SWIR制度下百万像素传感器的总成本超过数万美元。这是阻碍SWIR技术广泛应用的一个主要限制。本项目将专注于开发一种直接集成在硅上的可扩展SWIR成像设备。我们提出了一种新型的有机-无机混合上转换器件,它由无机硅-锗-锡光探测器和有机发光二极管直接串联集成而成。该器件能够将1.4-3微米范围内的光转换为可见光。这项技术为低成本、大尺寸的SWIR FPA在更宽的波长范围内工作提供了巨大的潜力。这对于许多应用都是非常理想的,例如高温制造过程、夜间监控、农业原材料清洁和分拣、生物成像以及汽车和消费品的塑料回收。

项目成果

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Moutanabbir, Oussama其他文献

Growth and Luminescence of Polytypic InP on Epitaxial Graphene
  • DOI:
    10.1002/adfm.201705592
  • 发表时间:
    2018-02-21
  • 期刊:
  • 影响因子:
    19
  • 作者:
    Mukherjee, Samik;Nateghi, Nima;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama
Atomically Smooth p-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature
  • DOI:
    10.1021/nn1030274
  • 发表时间:
    2011-02-01
  • 期刊:
  • 影响因子:
    17.1
  • 作者:
    Moutanabbir, Oussama;Senz, Stephan;Horn-von Hoegen, Michael
  • 通讯作者:
    Horn-von Hoegen, Michael
Indirect-to-direct band gap transition in relaxed and strained Ge1-x-ySixSny ternary alloys
  • DOI:
    10.1063/1.4889926
  • 发表时间:
    2014-08-14
  • 期刊:
  • 影响因子:
    3.2
  • 作者:
    Attiaoui, Anis;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama
Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn
  • DOI:
    10.1021/acs.cgd.0c00270
  • 发表时间:
    2020-05-06
  • 期刊:
  • 影响因子:
    3.8
  • 作者:
    Nicolas, Jerome;Assali, Simone;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama
Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires
  • DOI:
    10.1021/acsphotonics.1c01728
  • 发表时间:
    2022-03-16
  • 期刊:
  • 影响因子:
    7
  • 作者:
    Luo, Lu;Assali, Simone;Moutanabbir, Oussama
  • 通讯作者:
    Moutanabbir, Oussama

Moutanabbir, Oussama的其他文献

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{{ truncateString('Moutanabbir, Oussama', 18)}}的其他基金

Nanoscale and Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2022
  • 资助金额:
    $ 17.88万
  • 项目类别:
    Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
  • 批准号:
    RGPIN-2017-06893
  • 财政年份:
    2022
  • 资助金额:
    $ 17.88万
  • 项目类别:
    Discovery Grants Program - Individual
Nanoscale And Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2021
  • 资助金额:
    $ 17.88万
  • 项目类别:
    Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
  • 批准号:
    RGPIN-2017-06893
  • 财政年份:
    2021
  • 资助金额:
    $ 17.88万
  • 项目类别:
    Discovery Grants Program - Individual
Nanoscale and Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2020
  • 资助金额:
    $ 17.88万
  • 项目类别:
    Canada Research Chairs
Engineering Nanoscale and Quantum Phenomena in Emerging Electronic Materials
新兴电子材料中的工程纳米和量子现象
  • 批准号:
    RGPIN-2017-06893
  • 财政年份:
    2020
  • 资助金额:
    $ 17.88万
  • 项目类别:
    Discovery Grants Program - Individual
Scalable group V two-dimensional materials for mid-infrared optoelectronics
用于中红外光电的可扩展V族二维材料
  • 批准号:
    506700-2017
  • 财政年份:
    2019
  • 资助金额:
    $ 17.88万
  • 项目类别:
    Strategic Projects - Group
Nanoscale and Quantum Semiconductors
纳米和量子半导体
  • 批准号:
    CRC-2017-00229
  • 财政年份:
    2019
  • 资助金额:
    $ 17.88万
  • 项目类别:
    Canada Research Chairs
Monolithic multi-junction III-V solar cells with optimal 1 eV subcell
具有最佳 1 eV 子电池的单片多结 III-V 太阳能电池
  • 批准号:
    506727-2017
  • 财政年份:
    2019
  • 资助金额:
    $ 17.88万
  • 项目类别:
    Strategic Projects - Group
Mid-infrared integrated optoelectronics on silicon
硅基中红外集成光电器件
  • 批准号:
    508856-2017
  • 财政年份:
    2019
  • 资助金额:
    $ 17.88万
  • 项目类别:
    Collaborative Research and Development Grants

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合作研究:性能关键部件的混合兼容变形处理
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Silicon-compatible hybrid organic-inorganic shortwave infrared up-conversion device
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