Quantum Semiconductors
量子半导体
基本信息
- 批准号:1000220304-2010
- 负责人:
- 金额:$ 7.29万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Canada Research Chairs
- 财政年份:2017
- 资助国家:加拿大
- 起止时间:2017-01-01 至 2018-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Quantum semiconductors (QS) belong to a special class of materials attractive for building innovative photonic and opto-electronic devices. The transistor, laser and cellular phone are examples of QS-based devices that have contributed to the advancement of our knowledge of the surrounding world and to enhancing the quality of our life. It turns out that interfacing QS, and quantum dots (QD) in particular, with organic materials has the potential to deliver a better understanding of the organic world that we are made of (biological cells), or affected by (bacteria, viruses, toxins). It is the fundamental and applied research of QD for cell biology and laser-based nanoscience of QD that make the core activities proposed in the frame of this program.
量子半导体(QS)属于一类特殊的材料,对于构建创新的光子和光电器件具有吸引力。晶体管、激光器和手机都是基于量子点的设备的例子,它们有助于提高我们对周围世界的认识,提高我们的生活质量。事实证明,将QS,特别是量子点(QD)与有机材料相结合,有可能更好地了解我们所组成的有机世界(生物细胞),或受影响的有机世界(细菌,病毒,毒素)。量子点在细胞生物学和基于激光的量子点纳米科学中的基础和应用研究是本计划框架内提出的核心活动。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Dubowski, Jan其他文献
Dubowski, Jan的其他文献
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{{ truncateString('Dubowski, Jan', 18)}}的其他基金
Digital photocorrosion of III-V semiconductors and transition metal dichalcogenides: fundamental and applied research of nanofabrication and molecular interactions at atomic level
III-V族半导体和过渡金属二硫化物的数字光腐蚀:原子级纳米加工和分子相互作用的基础和应用研究
- 批准号:
RGPIN-2020-05558 - 财政年份:2022
- 资助金额:
$ 7.29万 - 项目类别:
Discovery Grants Program - Individual
Digital photocorrosion of III-V semiconductors and transition metal dichalcogenides: fundamental and applied research of nanofabrication and molecular interactions at atomic level
III-V族半导体和过渡金属二硫化物的数字光腐蚀:原子级纳米加工和分子相互作用的基础和应用研究
- 批准号:
RGPIN-2020-05558 - 财政年份:2021
- 资助金额:
$ 7.29万 - 项目类别:
Discovery Grants Program - Individual
Digital photocorrosion of III-V semiconductors and transition metal dichalcogenides: fundamental and applied research of nanofabrication and molecular interactions at atomic level
III-V族半导体和过渡金属二硫化物的数字光腐蚀:原子级纳米加工和分子相互作用的基础和应用研究
- 批准号:
RGPIN-2020-05558 - 财政年份:2020
- 资助金额:
$ 7.29万 - 项目类别:
Discovery Grants Program - Individual
Photonic sensing platform based on photocorrosion of III-V semiconductor microstructures
基于III-V族半导体微结构光腐蚀的光子传感平台
- 批准号:
RGPIN-2015-04448 - 财政年份:2019
- 资助金额:
$ 7.29万 - 项目类别:
Discovery Grants Program - Individual
Photonic sensing platform based on photocorrosion of III-V semiconductor microstructures
基于III-V族半导体微结构光腐蚀的光子传感平台
- 批准号:
RGPIN-2015-04448 - 财政年份:2018
- 资助金额:
$ 7.29万 - 项目类别:
Discovery Grants Program - Individual
Development of a process for high-throughput fabrication of high-quality Fibre Bragg Grating cavities
开发高品质光纤布拉格光栅腔高通量制造工艺
- 批准号:
529456-2018 - 财政年份:2018
- 资助金额:
$ 7.29万 - 项目类别:
Engage Grants Program
Mechanisms of biofunctionalization of photocorrosion-based semiconductor biosensors for quasi-continuous**monitoring of pathogens in water environments
基于光腐蚀的半导体生物传感器的生物功能化机制,用于水环境中病原体的准连续**监测
- 批准号:
494057-2016 - 财政年份:2018
- 资助金额:
$ 7.29万 - 项目类别:
Strategic Projects - Group
Mechanisms of biofunctionalization of photocorrosion-based semiconductor biosensors for quasi-continuous monitoring of pathogens in water environments
光腐蚀半导体生物传感器的生物功能化机制,用于准连续监测水环境中的病原体
- 批准号:
494057-2016 - 财政年份:2017
- 资助金额:
$ 7.29万 - 项目类别:
Strategic Projects - Group
Photonic sensing platform based on photocorrosion of III-V semiconductor microstructures
基于III-V族半导体微结构光腐蚀的光子传感平台
- 批准号:
RGPIN-2015-04448 - 财政年份:2017
- 资助金额:
$ 7.29万 - 项目类别:
Discovery Grants Program - Individual
Photonic sensing platform based on photocorrosion of III-V semiconductor microstructures
基于III-V族半导体微结构光腐蚀的光子传感平台
- 批准号:
RGPIN-2015-04448 - 财政年份:2016
- 资助金额:
$ 7.29万 - 项目类别:
Discovery Grants Program - Individual
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