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Development of reliable SiC MOSFET power modules

开发可靠的SiC MOSFET功率模块

基本信息

批准号：
21H01311
负责人：
舟木剛
金额：
$ 11.23万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2021
资助国家：
日本
起止时间：
2021-04-01 至 2024-03-31
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21H01311/
关键词：
power module SiC multi chip reliability Reliability multi-chip power modules SiC power MOSFETs electrothermal model thermal resistance

项目摘要

SiC power MOSFETs are enablers of disruptive progress beyond state-of-the-art in the key parameters of power electronics technology evolution: efficiency, power density and reliability. Specifically, their ability to be operated at higher switching speeds, higher switching frequencies and ambient temperatures has been shown to yield important system level benefits, even when transistors are used as a drop-in replacement of Si ones. Still, full exploitation of the superior features of wide-band-gap devices and their subsequent large volume deployment is conditional to the development of bespoke technological solutions and design options, including cooling and packaging, as well as design tools and validation methodologies. This year, the proposer developed reliability evaluation setup which simultaneously performs accelerated deterioration of SiC power MOSFET and evaluated the lifetime of key electrical power conversion applications. Because of intrinsic differences with the established silicon technology, the test evaluated SiC-bespoke design and validated its effect on device reliability. This work assessed the state-of-the-art in electro-thermal parameters spread for both planar-gate and trench-gate type SiC MOSFET. Based on the transient thermal resistance characterization experimented results, physical eletro-thermal simulation model was developed, which enabled to investigate the relation between device progressive degradation patterns and the initial parameters value spread.

SiC功率MOSFET在功率电子技术发展的关键参数（效率、功率密度和可靠性）方面，是突破性进步的推动者。具体而言，它们在更高的开关速度、更高的开关频率和环境温度下工作的能力已被证明可以产生重要的系统级益处，即使晶体管被用作Si晶体管的直接替代品。尽管如此，宽带隙器件的上级特性的充分利用及其随后的大批量部署取决于定制技术解决方案和设计选项的开发，包括冷却和封装，以及设计工具和验证方法。今年，该提案人开发了可靠性评估装置，同时进行SiC功率MOSFET的加速退化，并评估关键电力转换应用的寿命。由于与现有硅技术的本质差异，测试评估了SiC定制设计并验证了其对器件可靠性的影响。本文对平面栅和沟槽栅SiC MOSFET的电热参数分布进行了研究。基于瞬态热阻表征实验结果，建立了物理电热仿真模型，研究了器件渐进退化模式与初始参数值扩散之间的关系。