Morphology, Structure, and Adhesion of Plasma-Deposited ThinFilms

等离子体增强化学气相沉积(PECVD)技术被用于沉积薄膜作为钝化涂层以及用于电子和光学器件结构。PI建议对沉积参数与薄膜的形态、结构和与衬底的附着力之间的关系进行基础性研究。鉴于其广泛的应用基础，将采用Si3N4作为衬底。PI是一名称职的研究人员，拟议的研究具有促进基础知识和技术基础的潜力。该项目将由热力学和传输现象计划以及材料工程和加工计划联合资助。

Plasma-enhanced Chemical Vapor Deposition (PECVD) techniques are used to deposit thin films as passivation coatings and for electronic and optical device structures. The PI proposes a fundamental study of correlating deposition parameters with morphology, structure, and adhesion of the films to the substrate. Si3N4 will be used as substrate in view of its wide application base. The PI is a competent researcher and the proposed study has potential for advancing the fundamental knowledge and the technology base. This project will be jointly funded by the Thermodynamics and Transport Phenomena Program and the Materials Engineering and Processing Program.