Scanning Electron Microscopy of Semiconductor Heterostructures and Superlattices (Materials Research)

半导体异质结和超晶格是高性能电子和光电器件的关键材料结构。普林斯顿大学目前正在开展一个广泛的项目，研究这些结构在三种不同材料类别中的基本物理、材料生长过程和器件应用——(1)III-V晶体半导体、(2)硅基异质结构和(3)非晶超晶格。对于任何一种材料体系的完整研究计划，有必要了解生长膜的组成、膜的微观结构和在其中制造的器件，以及这些膜中载流子的输运性质。扫描电子显微镜（SEM）将被添加到实验室，以允许这些测量。需要进行能量色散x射线分析和光束感应电流分析。扫描电镜将对上述三个领域的研究小组有很大的帮助。

Semiconductor heterojunctions and superlattices are critical material structures for high performance electronic and opto- electronic devices. A broad program at Princeton is currently underway studying the basic physics, material growth processes, and device applications of these structures in three different material classes -- (1) III-V crystalline semiconductors, (2) silicon-based heterostructures, and (3) amorphous superlattices. For a complete research program in any of these material systems, it is necessary to know the composition of the grown films, the microstructure of the films and of the devices fabricated in them, and the transport properties of carriers in these films. Scanning electron microscopy (SEM) will be added to the laboratory to allow these meassurements. Energy dispersive x-ray analysis and beam induced current analysis will be required. The SEM will be a great aid to the research groups in all three of the above areas.