Nonstationary Transport in Semiconductor Device Modeling

对于1 μ m硅MOSFET，空间瞬态效应可占20% 改变当地的流动性。 这种影响肯定更大 in submicron亚微米devices设备. 在这个计算项目中，我们将 通过分析技术和Monte Carlo方法研究这种效应， San Diego Cray XMP上的Carlo模拟。 目标是 了解小距离的运输物理学， 亚微米器件，并获得迁移率公式，简单， 准确，用于设备模拟器。 主要计算 技术将是蒙特卡罗程序。 这是一个新的研究加速奖，没有资金， 被授予。 PI已在NSF获得50个服务单位 圣地亚哥超级计算机中心

For 1 um Si MOSFETs, the spatial transient effect can make up to 20% modification of the local mobility. This effect is certainly larger in submicron devices. In this computational project, we will investigate this effect by both analytical techniques as well as Monte Carlo simulations on the San Diego Cray XMP. The goal is to understand the transport physics at small distances involved in submicron devices and to obtain a mobility formula, simple and accurate, to use in device simulators. The major computational technique will be Monte Carlo procedures. This is an expedited award for novel research, for which no funds have been granted. The PI has been granted 50 service units at the NSF Supercomputer Center at San Diego.