An Inverse Optical Scattering Approach to Submicron Integrated Circuit Feature Inspection

这是SBIR项目的第二阶段，旨在改进集成电路计量。随着集成电路特性开始接近0.25微米尺寸，加强关键尺寸测量和质量控制的需求在未来几年将变得迫切。本项目是将数值逆散射理论与激光干涉测量相结合，以克服与传统测量相关的一些问题。在赠款的第一阶段证明了这种方法的可行性，目前正在开发一台原型数字显微镜。

This is Phase II of an SBIR project to improve integrated circuit metrology. The need to enhance critical dimension measurement and quality control will become acute in the next few years as integrated circuit features begin to approach the .25 micron size. This project is to use numerical inverse scattering theory with laser interferometry to overcome some of the problems associated with conventional metrology. The feasibility of this approach was demonstrated during Phase I of the grant and a prototype Numerical Microscope is currently being developed.