Photoreflectance Study of InGaAs/GaAs Single Quantum Wells

为了获得更多关于应变层InxGa1-xAs/GaAs系统的能带偏移信息，我们提出了一系列具有不同物理参数（即井宽，应变和In成分(x)）的表征良好的单量子阱结构的光反射光谱的详细系统研究。在单量子阱中，由于只有当导带偏移量Qc~0.5时才会观察到光洞跃迁，因此可以获得有关带偏移的附加信息。这是布鲁克林学院和蒙茅斯堡ETDL的合作成果。光反射率测量将在布鲁克林学院进行。异质结构将通过分子束外延在ETDL制造。此外，某些表征程序，如用于确定井宽的高分辨率透射电子显微镜（TEM）和用于评估x和e的拉曼散射将在蒙茅斯基地进行。迄今为止，对该系统的良好表征样本的系统工作很少。

In order to gain more information about the band offset in the strained layer InxGa1-xAs/GaAs system we propose a detailed systematic study of the photoreflectance spectra from a series of well characterized single quantum well structures with different physical parameters, i.e., well width, strain and In composition (x). In single quantum wells additional information about band offsets can be obtained since light-hole transitions will only be observed when the conduction band offset, Qc~0.5. This is a collaborative effort between Brooklyn College and ETDL, Ft. Monmouth. Photoreflectance measurements will be carried out at Brooklyn College. The heterostructures will be fabricated by molecular beam epitaxy at ETDL, Ft. Monmouth. In addition certain characterization procedures such as high- resolution transmission electron microscopy (TEM) to determine well width and Raman scattering to evaluate x and e will be carried out at Ft. Monmouth. To date there has been little systematic work on well characterized samples of this system.