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The Role of Defects in Epitaxy

The Role of Defects in Epitaxy
缺陷在外延中的作用
批准号:
8919457
负责人:
Philip Cohen
金额:
$36.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1990
资助国家:
美国
项目状态:
已结题
起止时间:
1990-02-15 至 1993-07-31
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中文摘要
翻译
研究的目的是利用反射高 能量电子衍射研究缺陷的作用, 化合物半导体例如镓的外延生长 砷化物。 主要关注的是表面的影响 结构和形态的影响。 程序 包括对邻近的台阶和扭结的稳定性的研究 表面,晶格失配膜中的应变松弛, 杂质对表面结构和扩散的影响 步骤,并不断提高反射高能量 电子衍射过程
英文摘要
The objective of the research is to use reflection high energy electron diffraction to study the role of defects in epitaxial growth of compound semiconductors, for example, gallium arsenide. The primary focus is on the effects of surface structured and morphology on the growth process. The program includes studies of stability of steps and kinks on vicinal surfaces, relaxation of strain in lattice mismatched films, effects of impurities on surface structure and propagation of steps, and continued improvement of the reflection high energy electron diffraction process.
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Elucidation of mechanisms that restrict the activation of Toll-Like Receptors and the IL-1 receptor to prevent inflammatory and autoimmune diseases
  • 批准号:
    MR/R021406/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $208.91万
  • 财政年份:
    2018
  • 负责人:
    Philip Cohen
  • 依托单位:
Characterisation of signal transduction pathways that restrict activation of the innate immune system to prevent inflammatory and autoimmune diseases
  • 批准号:
    MR/K000985/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $185.54万
  • 财政年份:
    2013
  • 负责人:
    Philip Cohen
  • 依托单位:
Collaborative Research: Impurity Incorporation into Epitaxial Graphene on SiC
  • 批准号:
    1206793
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $21.6万
  • 财政年份:
    2012
  • 负责人:
    Philip Cohen
  • 依托单位:
TX BRIDGE (Texans Building Robust, Innovative & Diverse Graduate Education)
  • 批准号:
    1111129
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.0万
  • 财政年份:
    2011
  • 负责人:
    Philip Cohen
  • 依托单位:
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