Presidential Young Investigator Award

黑格尔博士被选为总统青年研究员。她积极从事半导体材料光电特性的研究，重点研究高阻材料的暂态行为和空间电荷相关效应。在国家科学基金的这项研究计划中，她将从事以下研究：(1)高阻材料中的电输运和瞬变现象，如低温高纯材料、半绝缘砷化镓或大带隙材料，(2)从载流子寿命主导的输运转变为介电弛豫主导的输运，(3)扩展缺陷和点缺陷对光电性质的影响，(4)表征半导体薄膜和异质结的新技术的发展。这项研究的最终目标是获得必要的知识和理解，以便在广泛的时间范围内研究材料中的光和电诱导的瞬变效应，以阐明自由载流子和陷阱载流子之间的相互作用以及半导体中的缺陷之间的动力学。这项研究对用于高速开关、快速探测器、光电电路的隔离基板以及未来的通信和计算系统的材料具有重要意义。

Dr. Haegel has been selected as a Presidential Young Investigator. She is active in research on optoelectronic properties of semiconductor materials, with emphasis on transient behavior and space charge-related effects in high resistivity materials. In this research program for the National Science Foundation she will pursue studies to include the following: (1) electrical transport and trasient phenomena in high resistivity materials, such as high purity materials at low temperature, semi-insulating gallium arsenide, or large bandgap materials, (2) transition from transport dominated by carrier lifetime to transport dominated by dielectric relaxation as a function of temperature, (3) effects of extended defects, and point defects on optical and electronic properties, (4) development of new techniqaues to characterize semiconductor thin films and heterostructures. The ultimate goal of the research is to acquire the knowledge and understanding necessary to study both optically and electrical induced transient effects in materials over a wide range of time scales to elucidate the dynamics of the interactions between free and trapped carriers and defects in semiconductors. The research is important for materials used in high=speed switches, fast detectors, isolating substrates for optoelectronic circuits, and future communications and computation systems.