Presidential Young Investigators Award for MOCVD System

NSF为该奖项提供的前两年资金将 用于获得一个专门设计的系统， 三元和四元化合物的化学气相沉积 Ga-Al-In-As-Ph系统 虽然1：1匹配的资金和资金， 安全相关设备，如煤气柜和洗涤器， 从大学获得，预计费用 这个系统将充分吸收两年的基础和工业 在PYI计划下的匹配资金。 该系统将用于 三个研究领域：增长技术，将比较 外延的快速热和气体切换控制， 中断外延，将探索技术， 清洗衬底以在部分处理的衬底上重新开始生长 晶圆，以及新型光电器件的研究。 这最后一 该项目将与几位同事合作完成。

The first two years of funding from NSF for this award will be used to acquire a specially designed system to do metal organic chemical vapor deposition of ternaries and quaternaries from the Ga-Al-In-As-Ph system. While 1:1 matching monies and funding for safety related equipment such as gas cabinets and scrubbers have been secured from the University, it is expected that the cost of this system will fully absorb two years of both base and industry matched funding under the PYI program. The system will be used for three research areas: growth techniques, which will compare rapid thermal and gas switched control of the epitaxy, interrupted epitaxy which will explore techniques for insitu substrate cleaning to reinitiate growth on partially processed wafers, and studies of new optoelectronic devices. This last project will be done in collaboration with several colleagues.