EIA: Rapid Thermal Vapor Phase Epitaxy

本项目的目标是证明该标准 气相外延生长技术可以扩展到 时间/温度制度，以允许制造亚100 A层， 突变和/或准突变界面，具有更少的缺陷， 成本低于MBE。 本研究使用的材料将 是硅，由于硅VPE的高生长速率， 硅分子束外延，以及缺乏任何替代的生长技术。 晶片 将在气流中使用直流电弧灯和闪光灯快速加热。 冷却将通过直接接触“冷却”板来完成。 两 将探索生长化学：硅烷的热解， 在接近800 ℃的温度下进行以形成非常突然的结， 减少氯硅烷的使用，以获得最高质量的材料， 潜在的完全选择性生长。 电影将被描述为 化学的，电学的，和显微镜下的 作为最终的证据 材料质量晶体管将被制造和表征， 注意力集中在弹道双极装置上。

The objective of this project is to demonstrate that standard vapor phase epitaxial growth techniques can be extended into time/temperature regimes to allow fabrication of sub 100 A layers with abrupt and/or quasi abrupt interfaces, with fewer defects and at much lower cost than with MBE. The material to be used for this study will be silicon, due to the high growth rates of silicon VPE, the difficulty of silicon MBE, and the lack of any alternate growth technique. Wafers will be heated rapidly while in a gas flow using DC arc and flash lamps. Cooling will be done using direct contact with a "cool" plate. Two growth chemistries will be explored: pyrolysis of silane which can be done at temperatures close to 800 C for very abrupt junction formation, and reduction of chlorosilanes for the highest quality material and potentially, completely selective growth. Films will be characterized chemically, electrically, and microscopically. As final proof of material quality transistors will be fabricated and characterized with attention being paid to a ballistic bipolar device.