Defect Structure of Indium Phosphide Alloy Thin Films and Heterostructures

这项研究是一项高生产力资助的延续， 西北大学（DMR-8701167）。 那三年 在国家科学基金会的支持下， 授予博士学位1人，硕士学位1人， 有三个学生 博士学位的各个阶段 ℃下 七篇论文被接受发表在refered 科学期刊，还有七个正在进行中。 研究 在此期间，强调了以下几点：（1）过渡和 作为化合物中电子活性缺陷的稀土金属 半导体，（2）磷化铟的流动调制外延 磷化铟及其合金中的缺陷 异质结构 当前的研究是深层次的 有意掺杂的外延磷化铟及其 常压有机金属蒸气法制备合金 相外延 一些缺陷现象正在被 例如，强调重掺杂中的补偿机制， 材料，与替代相关的深施主能级 杂质，量子威尔斯和超晶格中的深能级，以及 稀土相关杂质。 这些材料正在 使用光致发光、光电导和 深能级瞬态谱

The research is a renewal of a highly productive grant at Northwestern University (DMR-8701167). During the three years of support by the National Science Foundation two students were awarded the doctorate degree, one received the masters degree, and three students are in various stages of the doctorate degree. Seven papers were accepted for publication in refereed scientific journals, and seven more are in process. The research during that period emphasized the following: (1) transition and rare earth metals as electronically active defects in compound semiconductors, (2) flow modulation epitaxy of indium phosphide and its alloys, (3) defects in indium phosphide based heterostructures. The current research studies deep level defects in deliberately doped epitaxial indium phosphide and its alloys prepared by atmospheric pressure organometallic vapor phase epitaxy. A number of defect phenomena are being emphasized, for example, compensation mechanisms in heavily doped material, deep donor levels associated with substitutional impurities, deep levels in quantum wells and superlattices, and rare earth related impurities. The materials are being characterized using photoluminescence, photoconductivity, and deep level transient spectroscopy.