New Device Concepts and Intraband Processes

这项研究将包括电子和红外测量以及设备物理理论和建模。与我们的预测一致，涉及隧道和光激发的带内过程已被发现在电子开关速度和定制红外探测器响应的能力方面具有特殊的优势乐队。提出的研究将面向提高对选择性掺杂A1GaAs/GaAs和硅器件带内过程的理解，以及有助于(A)发展的概念。异质结构量子阱（超晶格）红外探测器，(B)涉及量子阱结构的超快电子器件，(C)采用突变界面的红外光电器件。一些提议的工作是探索性的，而其他方面代表了当前研究的延续。在外延生长过程中，涉及与调制掺杂相关的金属-绝缘体过渡杂质带界面的红外探测器概念将得到发展，并将对杂质带界面的影响进行研究研究。本工作涉及到异质结构器件中的超快谐振隧穿问题。这项工作还涉及电子-电子交换相互作用，以及异质结构界面和调制掺杂外延生长硅界面的影响。

The research will include electronic and infrared measurements as well as device physics theory and modeling. In accord with our predictions, intraband processes involving tunneling and photoexcitation have been found to have special advantages in terms of electronic switching speed and the ability to tailor infrared detector response bands. The proposed research will be oriented toward improved understanding of intraband process in selectively doped A1GaAs/GaAs and silicon devices and toward concepts which could contribute to the development of (A) heterostructure quantum well (superlattice) infrared detectors, (B) ultrafast electronic devices involving quantum well structures and, (C) infrared optoelectronic devices employing abrupt interfaces. Some of the proposed work is exploratory while other aspects represent a continuation of current research. Infrared detector concepts involving abrupt metal-insulator transition impurity band interfaces associated with modulated doping during epitaxial growth will be developed and effects at impurity band interfaces will be studied. The work involves issues related to ultrafast resonant tunneling in heterostructure devices. The work also involves electron-electron exchange interactions, and effects at heterostructure interfaces as well as interfaces in modulation doped, epitaxially grown silicon.