A Novel Optoelectronic Thyristor for Picosecond High Power Switching Applications (REU Supplement)

一种新的三端设备，双 异质结构光电晶闸管 （DHOET），将被调查皮秒 高功率开关和用于产生短路 高输出功率的激光脉冲。 的 器件是从硅的概念发展而来的 双异质结（DH） 激光器，将基于GaInAsP/InP 液相生长异质结构 外延生长 虽然许多研究工作 关于硅基压敏电阻的报道很少， 已完成的A1GaAs/GaAs和没有 本文报道了GaInAsP/InP 的基础上。 其主旨是 这项研究旨在了解 开启时的带不连续性（Ec，Ev） 和关断速度的建议， 探索它们的独特之处， 与Si晶闸管相比，包括：（i） 更高的设备速度，（ii）更高的设备 工作温度，（iii）较高的辐射 电阻，和（iv）优良的光学触发 以InP为光学窗口的灵敏度。 这项研究可能会开辟一个 三、新的研究领域-- 适用于高速应用的V-DHOSTIC 脉冲功率开关和产生 亚纳秒电光高 能量脉冲 在此进行的研究 该项目预计将推动我们的 对异质结构的理解 还有许多其他重要的应用， 作为制造新型光学器件的潜力， 放大器.

A new three terminal device, double heterostructure optoelectronic thyristor (DHOET), will be investigated for picosecond high power switching and for generating short laser pulse with high output power. The device is developed from concepts of Si thyristors and double heterostructure (DH) lasers and will be based on GaInAsP/InP heterostructures grown by liquid phase epitaxy. While numerous research works have been reported about Si based thyristors, little has been done as A1GaAs/GaAs and no work has been reported on GaInAsP/InP based thyristors. The main thrust of this proposed study is to understand the effects of band discontinuities ( Ec, Ev) on the turn-on and turn-off speed of the proposed DHOETs and to explore their unique features as compared to Si thyristors including: (i) much higher device speed, (ii) higher device operating temperature, (iii) higher radiation resistance, and (iv) excellent optical triggering sensitivity with InP as the optical window. This research may open up a practically important new research area of III- V-DHOETs for the applications of high speed pulsed power switching and the generation of subnanosecond electrical and optical high power pulses. Research performed in this project is expected to advance our understanding of heterostructures and will have many other important applications such as the potential of fabricating novel optical amplifiers.