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Low Temperature Investigations of Nanostructures and Disordered Mesoscopic Systems

Low Temperature Investigations of Nanostructures and Disordered Mesoscopic Systems
纳米结构和无序介观系统的低温研究
批准号:
9107460
负责人:
Wiley Kirk
金额:
$5.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-09-01 至 1993-08-31

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中文摘要
翻译
我们建议继续我们的低温研究计划, 无序介观系统和专门设计的 纳米结构。 第一部分,关于量子 在运输过程中的干扰影响,将包括研究 窄带隙介观导体和超晶格效应。 此外,我们设想的工作单电子充电在一个 垂直隧穿结构,探讨“库仑”问题 封锁”与量化通量电导效应,并制定了一个 分裂栅静电AB器件。 材料制造和加工方面的独特进步, 可访问全新的实验系统。 这项工作旨在 全面了解量子相位干涉 和相关的输运效应在复杂的无序 系统. 它直接关系到目前和不久的将来的努力, 为科学领域的测量和控制开发功能强大的新设备 和行业
英文摘要
We propose to continue our low-temperature research program on disordered mesoscopic systems and specially designed nanostructures. The first part, which concerns quantum interference effects in transport processes, will comprise studies of narrow-bandgap mesoscopic conductors and superlattice effects. In addition, we envisage work on single-electron charging in a vertical tunneling structure, probing the question of "coulomb blockade" vs quantized-flux conductance effects, and developing a split-gate, electrostatic AB device. Unique advances in materials fabrication and processing have given accessibility to entirely new experimental systems. This work aims at a comprehensive understanding of how quantum phase interference and correlated transport effects evolve in complex disordered systems. It bears directly upon current and near-future efforts to develop powerful new devices for measurement and control in science and industry.
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Workshop: Designed Quantum Materials Workshop; To be Held at The National Institute of Standards and Technology, in Gaithersburg, MD January 23-24, 2018
  • 批准号:
    1747578
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.2万
  • 财政年份:
    2017
  • 负责人:
    Wiley Kirk
  • 依托单位:
GOALI: Nanomanufacturing of Atomically Precise Bipolar Electronic Devices
  • 批准号:
    1563233
  • 项目类别:
    Standard Grant
  • 资助金额:
    $20.0万
  • 财政年份:
    2016
  • 负责人:
    Wiley Kirk
  • 依托单位:
Two-Stage Buffer Layers for Solar Power in a InGaP - Si Double Junction Cell
  • 批准号:
    1214172
  • 项目类别:
    Standard Grant
  • 资助金额:
    $32.21万
  • 财政年份:
    2012
  • 负责人:
    Wiley Kirk
  • 依托单位:
Two-Stage Buffer Layers for Solar Power in a InGaP - Si Double Junction Cell
  • 批准号:
    1002133
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2010
  • 负责人:
    Wiley Kirk
  • 依托单位:
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