Stability of Metal Contacts to Indium Phosphide

将进行基础性研究，以研究金属与磷化铟接触的热力学、动力学和形态稳定性，并根据界面上的稳定性来关联选定的InP/金属和金属间接触的电行为。这项研究尤其有利于为化合物半导体材料的欧姆接触和肖特基势垒的改进--性能和可靠性--提供更可靠的科学基础，并被认为是先进的电子和光子学科学和技术的关键。这项研究有望对电子/光子材料的金属界面的基本性质提供更深层次的基本理解。从应用的角度来看，了解这些性质及其与材料合成和加工的关系有助于半导体器件的设计和制造。研究结果将对大规模、高速集成电子和光子器件及电路的技术具有普遍意义。

Fundamental research to investigate the thermodynamic, kinetic and morphological stabilities of metal contacts to indium phosphide and to correlate the electrical behavior of selected InP/metal and intermetallic contacts in terms of their stabilities at the interfaces will be conducted. The research is of particular interest for providing a sounder scientific basis for the improvement--performance and reliability--of ohmic contacts and Shottky barriers to compound semiconductor materials, and is considered critical to advanced electronics and photonics science and technology. %%% This research is expected to provide deeper fundamental understanding of basic properties of metal interfaces to electronic/photonic materials. From an application point of view, understanding these properties and their relationship to materials synthesis and processing is beneficial to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic and photonic devices and circuits.