Deep Levels in Semiconductors by Microprobe X-Ray Fluorescence and X-Ray Excited Luminescence

杂质表征的实验研究， 特别是那些形成深能级的，在II-VI和其他 先进的X射线技术正在进行半导体。 研究的主要目的是获得一个直接的 宽带隙发光特性的相关性 半导体和特定杂质的局部浓度。 虽然最近取得了显着的成果，蓝- 基于ZnSe的发射激光异质结二极管， 杂质在限制p型最大载流子浓度 ZnSe是不理解的，并且预计这一结果将是可能的。 研究将对理解和 一般来说，II-VI族材料以及其它材料改进 半导体 %%% 这项研究预计将有助于找到几个问题的解决方案 问题，并有助于了解 II-VI材料中与低浓度杂质有关的问题 有害影响基本辐射的浓度 确定可行性和效率的程序 光电子器件如激光器和发光器件 二极管（LED）。 理解影响的基本性质 这些材料中的超低杂质含量将 有助于实现改进的光电 在蓝色光谱区工作的设备。

Experimental studies on the characterization of impurities, particularly those that form deep levels, in II-VI and other semiconductors by advanced X-ray techniques are being conducted. The principal goal of the research is to obtain a direct correlation of the luminescent properties of wide bandgap semiconductors and local concentration of specific impurities. Although remarkable results have recently been obtained for blue- emitting laser heterjunction diodes based on ZnSe, the role of impurities in limiting the maximum carrier concentration of p-type ZnSe is not understood, and it is expected that the results of this research will be of significant benefit to the understanding and improvement of II-VI materials, in general, as well as other semiconductors. %%% This research is expected to aid in finding solutions for several problems and to contribute to the understanding of outstanding issues in II-VI materials related to impurities at low concentrations which adversely affect fundamental radiative processes determining the feasibility and efficiency of optoelectronic devices such as lasers and light emitting diodes(LED). Understanding the fundamental nature of the influence of ultra-low levels of impurities in these materials will contribute toward the realization of improved optoelectronic devices operating in the blue spectral region.