Heteroepitaxial Silicide Formation on Silicon and Silicon Germanium Alloys

将进行基础研究，以研究硅化物和硅化物-锗化物膜在共格应变Si和Si1-xGex薄膜上的形成。研究的特点是能够独立于膜-基界面的化学成分改变膜-基应变；应变与膜-基对的热力学和电学性质直接相关，而不受化学因素的影响；此外，对熔敷金属与Si1-xGex衬底反应生成硅化物或硅化物-锗化合物的化学和物理进行了初步研究。这项研究有望加深对电子/光子材料功能至关重要的薄膜和界面的基本性质以及与器件和电路相关的特殊成分和结构组合及配置的基本理解。从应用的角度来看，了解这些性质及其与材料合成和加工的关系对半导体器件的设计和制造是非常有益的。研究结果将对大规模、高速集成电子和光子器件及电路的技术具有普遍意义。

Fundamental research to investigate the formation of silicide and silicide-germanide films on coherently strained Si and Si1-xGex films will be conducted. Special features of the research are the ability to alter film-substrate strain independently of film-substrate interfacial chemical composition; the direct correlation of strain, independent of chemical factors, with thermodynamic and electronic properties of the film-substrate couple; and, preliminary studies of the chemistry and physics of formation of silicide or silicide-germanide compounds from deposited metals reacted with Si1-xGexsubstrates. %%% This research is expected to provide deeper fundamental understanding of basic properties of thin films and interfaces critically important to the functionality of electronic/photonic materials and particular compositional and structural combinations and configurations relevant to devices and circuits. From an application point of view, understanding these properties and their relationship to materials synthesis and processing is highly beneficial to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic and photonic devices and circuits.