Fabrication of Field Emitter Arrays for Vacuum Devices

真空器件虽然仍处于发展阶段，但已经在许多应用中显示出显著的前景。除了能够在非常高的频率下工作和不受辐射外，它最近还在法国作为平板显示器的产品进行了演示。真空器件的主要缺点之一与制造技术有关。在这些设备充分发挥其潜力之前，还有许多问题有待解决。发射体的性能，包括电学、热、机械稳定性，往往没有得到优化。为了提高这些器件的性能，必须开发替代材料和新的制造技术。本项目将制作真空器件的场发射极阵列。两种新材料将作为发射体进行测试，包括WSi2和InP。对于Wsi2发射体，它可以通过烧结沉积在Si发射体上的W或通过直接沉积在衬底上的Wsi2图案化来形成。包括电子束和掩蔽离子束光刻在内的高分辨率图像化技术将用于定义具有亚微米尺寸的抗蚀剂发射体。湿化学蚀刻和干蚀刻技术将用于产生发射器的垂直轮廓。垂直发射器形成后，发射器尖端将通过各种干蚀刻条件进行锐化，包括饰面、下切、掩膜侵蚀和依赖于掺杂剂的干蚀刻。为了使真空装置在空气中工作，将采用双角蒸发制造密封三极管结构。* * *

9209740 PANG Vacuum devices, although still in the development stage, have already show significantly promise in a number of applications. Besides being able to operated at very high frequency and immune to radiation, it has been recently demonstrated as a product for flat panel display in France. One of the major drawbacks for vacuum devices is related to the fabrication technology. A number of issues have yet to be resolved before the devices can achieve its full potential. The emitters properties including their electrical, thermal, mechanical stability are often not optimized. To improve the performance of these devices, alternative materials and new fabrication technology have to be developed. In this project, field emitter arrays for vacuum devices will be fabricated. Two new materials will be tested as emitters, including WSi2 and InP. For Wsi2 emitters, it will be formed by either sintering W deposited on Si emitters or by patterning WSi2 that is deposited directly on the substrate. High resolution patterning techniques including electron beam and masked ion beam lithography will be used to define emitters with submicrometer dimensions in resist. Wet chemical etching and dry etching techniques will be for generating vertical profiles for the emitters. The emitter tips will be sharpened by various dry etching conditions after the vertical emitters are formed, including faceting, undercutting, mask erosion, and dopant dependent dry etching. In order for the vacuum devices to be operational in air, a sealed triode structure will be fabricated using double angle evaporation. ***