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Small Grants for Exploratory Research: Feasibility and Design of a Novel Sheet Growth Method for Single-Crystal Growth.

Small Grants for Exploratory Research: Feasibility and Design of a Novel Sheet Growth Method for Single-Crystal Growth.
用于探索性研究的小额资助:单晶生长的新型片材生长方法的可行性和设计。
批准号:
9315980
负责人:
Jeffrey Derby
金额:
$2.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1993
资助国家:
美国
项目状态:
已结题
起止时间:
1993-08-15 至 1995-01-31

项目摘要

项目成果

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中文摘要
翻译
9315980德比由探索性研究小额赠款资助,将对单晶片的生长过程进行数值模拟。有限元方法将被应用于辐射熔化的流体区,包含在表面张力中,在其中多晶片随后被重塑为单晶。要检查的项目是熔体-晶体界面的形状、半月面形状、整体传热和整体工艺稳定性。直接以薄片形式生长单晶半导体材料的能力将大大提高半导体晶片生产的工艺效率。***
英文摘要
9315980 Derby Funded with a Small Grant for Exploratory Research, numerical simulations are to be carried out of a process for growing single crystal sheets. Finite element methods will be applied to a radiatively melted fluid zone, contained by surface tension, in which a polycrystalline sheet is subsequently reformed as a single crystal. Items to be examined are the shape of the melt- crystal interface, the meniscus shape, the overall heat transfer, and the overall process stability. The ability to grow single crystal semiconductor materials directly in sheet form would permit drastic improvement in process efficiency for the production of semiconductor wafers. ***
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GOALI: Manufacturing Large, Diamond Single Crystals via High-Pressure, High-Temperature Growth
  • 批准号:
    2308877
  • 项目类别:
    Standard Grant
  • 资助金额:
    $44.28万
  • 财政年份:
    2023
  • 负责人:
    Jeffrey Derby
  • 依托单位:
GOALI: Toward Improving Quality and Yield of Large-Area, Single-Crystal Sapphire Wafers via Fundamental Understanding of Bubble Engulfment During Growth
  • 批准号:
    1760689
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.31万
  • 财政年份:
    2018
  • 负责人:
    Jeffrey Derby
  • 依托单位:
Workshop: Ninth International Workshop on Modeling in Crystal Growth (IWMCG-9); Kailua-Kona, Hawaii; 21-24 October 2018
  • 批准号:
    1853512
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.0万
  • 财政年份:
    2018
  • 负责人:
    Jeffrey Derby
  • 依托单位:
Toward viable horizontal ribbon growth of solar silicon: Understanding and ameliorating process instabilities
  • 批准号:
    1336164
  • 项目类别:
    Standard Grant
  • 资助金额:
    $31.86万
  • 财政年份:
    2013
  • 负责人:
    Jeffrey Derby
  • 依托单位:
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