Epitaxial Ferroelectric/Conductive Oxide Thin-Film Heterostructures on Silicon for Microelectronics Applications

9361597 Li在单片集成氧化物铁电材料的半导体器件成为现实之前，必须消除重要的技术障碍。该方案的创新之处在于：1)采用成功的脉冲激光沉积(PLD)技术，在硅衬底上实现了铁电薄膜的完全外延生长；2)用La0.5Sr0.5CoO_3(LSCO)--一种外延导电氧化物材料取代了铂底电极；3)实现了高密度铁电/导电氧化物电容器与硅集成电路的全单片集成。第一阶段的主要目的将是证明在YSZ外延缓冲硅衬底上，在导电氧化物薄膜(LSCO)上外延生长铁电薄膜(BaTiP3或PbZrxTil-x)的可行性。由此产生的异质结构将用于制造简单的铁电开关电容器。该器件将被充分表征，并将成为铁电薄膜在微电子工业中应用的基本构件。

9361597 Li Important technologic obstacles must be removed before semiconductor devices monolithically integrated with oxide ferroelectrics can become a practical reality. The innovations of the proposed program are: 1) advancing thin-film deposition technology to achieve fully epitaxial growth of ferroelectric films on silicon substrated, by using the highly successful pulsed laser deposition (PLD) technique; 2) replacing the Pt bottom electrode with La0.5Sr0.5CoO3 (LSCO) - an epitaxial conductive oxide material; 3) achieving a full monolithic integration of high-density ferroelectric/conductive oxide capacitors with Si integrated circuits. The main thrust of Phase I will be to demonstrate the feasibility of epitaxial growth of a ferroelectric thin film (BaTiP3 or PbZrx Til-x), on top of a conductive oxide film (LSCO), on top of an epitaxial YSZ buffered silicon substrate. The resulting heterostructures will be used to fabricate a simple ferroelectric switched capacitor. This device will be fully characterized and will become the basic building block for applications of ferroelectric thin films to the microelectronics industry.