Short Wavelength Semiconductor Injection Lasers Based on III-V Nitrides

9414510安德森该提案描述了一项为期三年的研究计划，该计划旨在对GaN基短波长半导体注入激光器进行实验演示，并调查与III-V族氮化物激光应用相关的几个关键科学和技术问题。 最初的重点将放在6 H-SiC衬底上生长的A1 GaN/GaN/InGaN垂直腔面发射激光器（VCSEL）结构的演示上，尽管在整个项目过程中将研究与GaN基异质结构激光器和其他器件直接相关的广泛材料和器件设计问题。 理论和实验工作将包括GaN，InGaN和A1 GaN外延层和异质结构的生长和表征，异质结构建模，VCSEL激光建模，设计，制造和表征。 外延生长、结构表征和电学表征将由先进技术材料公司的研究人员进行。 （ATMI）的丹伯里，CT，谁是目前参与的GaN基半导体的发展，并将在这个项目的全面合作者。 这项建议正在提交考虑作为一个行业-大学合作研究项目（IUCRP）根据NSF的资助机会与行业（GOALI）计划的学术联系。 ***

9414510 Anderson This proposal describes a three-year research plan directed toward the experimental demonstration of GaN-based short-wavelength semiconductor injection lasers and the investigation of several key scientific and technological issues related to laser applications of the III-V nitrides. Strong initial emphasis will be placed on the demonstration of A1GaN/GaN/InGaN vertical-cavity surface- emitting laser (VCSEL) structures grown on 6H-SiC substrates, although a broad range of material and device design issues directly relevant to GaN-based heterostructure lasers and other devices will be investigated throughout the course of the project. Theoretical and experimental work will encompass growth and characterization of GaN, InGaN, and A1GaN epilayers and heterostructures, heterostructure modeling, and VCSEL laser modeling, design, fabrication, and characterization. Epitaxial growth, structural characterization, and electrical characterization will be carried out by researchers at Advanced Technology Materials, Inc. (ATMI) of Danbury, CT, who are currently involved in the development of GaN-based semiconductors and will be full collaborators on this project. This proposal is being submitted for consideration as an Industry-University Cooperative Research Project (IUCRP) under the NSF's Grant Opportunities for Academic Liaisons with Industry (GOALI) program. ***