Acquisition of a Variable-Temperature Scanning Tunneling Microscope and X-Ray Photoelectron Spectroscopy Facility for a Molecular Beam Epitaxy System

9601598佩尔兹将在俄亥俄州立大学建立一个超高真空、可变温度扫描隧道显微镜和一个X射线光谱分析设施。该设备将连接到模块化的分子束外延系统，从而允许对异质结构界面的化学和电子结构进行原位表征。该设施支持的研究活动包括研究在晶格匹配的Ge/GeSi/Si衬底上生长的GaAs的界面化学和原子结构，金属/半导体结构中的电荷陷阱，用III-V材料生长外延金属/半导体结构，以及在聚合物薄膜上形成金属接触。扫描隧道显微镜的配置将使其除了进行传统的表面结构研究外，还可以进行埋藏界面的变温弹道电子发射显微镜。这将允许在广泛的金属覆盖范围内详细研究金属/半导体界面的形成。%将所需的仪器结合到薄膜生长设备中，为表征不同材料之间的界面提供了一个强大的工具。除了直接的研究好处外，购买仪器还将通过使用最先进的设施进行跨学科研究，加强对来自几个系的研究生的培训。***

9601598 Pelz An ultrahigh-vacuum, variable-temperature scanning tunneling microscope and an x-ray spectroscopy facility will be established at Ohio State University. The facility will be attached to a modular molecular beam epitaxy system and will thus allow for in situ characterization of the chemistry and electronic structure of heterostructure interfaces. Research activities supported by the facility include studies of the interface chemistry and atomic structure of GaAs grown on lattice-matched Ge/GeSi/Si substrates, charge trapping in metal/semiconductor structures, the growth of epitaxial metal/semiconductor structures with III-V materials, and metal contact formation on polymer films. The scanning tunneling microscope will be configured so that it can perform variable-temperature ballistic electron emission microscopy of buried interfaces, in addition to conventional structural studies of surfaces. This will permit detailed studies of metal/semiconductor interface formation over a wide range of metal coverage. %%% The incorporation of the requested instrumentation to the film growth facility results in a powerful tool for the characterization of interfaces between dissimilar materials. In addition to the direct research benefits, acquisition of the instrumentation will enhance the training of graduate students from several departments through interdisciplinary research using state-of-the-art facilities. ***