Acquisition of Laser Ablation Deposition System

9601791 Celik-Butler获得激光烧蚀沉积系统（LAD）。与其他可用的技术（如溅射和电子束蒸发）相比，LAD已被证明是制造化合物氧化物薄膜的优越沉积技术。LAD将被放置在固态技术实验室，该实验室具有半导体器件制造能力，包括Si- mos， Si微加工和半导体激光器。拟议的LAD系统将成为北德克萨斯州地区唯一的LAD系统。LAD系统将主要用于沉积半导体YBaCuO薄膜，用于非冷却微辐射热计和半绝缘YBaCuO薄膜，用于非冷却热释电探测器。这项工作得到了NSF、ARO和德州仪器的支持。拟议的LAD系统项目的成本为275,000元，其中新大将承担45%的费用。YBaCuO以其超导特性而闻名。然而，最近，YBaCuO的非超导相位在非冷却红外（IR）探测、光的二次谐波产生和光导开关等许多应用中都证明了自己的用处。这些材料的组成和性能稳定，易于沉积，因此很有吸引力。YBaCuO的一个相是YBa2Cu3O6+x。当x从0增加到1时，YBa2Cu3O6+x从具有明确能隙的绝缘体演变为费米玻璃，然后通过金属-绝缘体转变为金属。同时，晶体晶格由四边形变为正交晶格。因此，氧含量决定了材料的电学和光学性质。YBa2Cu3O6+x是一种具有热释电性质的铁电材料。在半绝缘阶段，它具有低泄漏电流，因此适合应用于非冷却热释电探测器。在半导体相中，YBa2Cu3O6+x具有窄带隙，固有的1/f噪声低，电阻率随温度变化大（TCR=3.9%），适合作为非冷却型测热计。我们的初步研究表明，半导体的YBa2Cu3O6+x非冷却热辐射计比冷却的超导YBa2Cu3O6+x热辐射计具有更高的灵敏度（Rv = 6 × 104v /W）和探测能力。此外，它们的性能优于其他非制冷红外探测器，包括VO2热释热计和PbTiO3热释电探测器。迄今为止，半导体YBa2Cu3O6+x红外敏感材料已经在室温下通过简单的射频溅射制备到Si， SiO2和Si3N4衬底上，显示了材料与CMOS工艺在制造微机械，非冷却微热计阵列方面的兼容性，焦平面信号处理导致低成本的红外成像电路。我们相信，在制备YBa2Cu3O6+x薄膜的过程中，使用LAD可以显著改善对薄膜化学计量的控制。这将允许更大的再现性，并允许化学反应被优化，以产生更好的性能。因此，获得LAD系统将对该项目产生巨大的好处。此外，LAD系统将提高实验室的能力，使未来的研究项目能够制造具有线性和非线性电光特性的化合物氧化物薄膜。在这个领域的工作将补充半导体激光器组，并允许集成光学器件的制造。此外，还将启动铁电化合物氧化物在硅器件（如dram中的栅极绝缘体）上的应用项目。由于拟议的系统将是北德克萨斯州唯一的LAD系统，预计其他研究人员将被吸引到该设施。新加坡管理大学的教员与德克萨斯大学阿灵顿分校、德克萨斯大学达拉斯分校和北德克萨斯大学的教员有着非常密切的合作关系。此外，许多公司都参与了达拉斯地区硅和砷化镓器件的制造。Worth metroplex可能需要访问一个LAD系统来测试一些概念。外部用户很可能会觉得这个设施很有吸引力。＊＊＊

9601791 Celik-Butler The acquisition of a Laser Ablation Deposition system (LAD) is enabled. LAD has been demonstrated as a superior deposition technique for the fabrication of compound oxide thin films as compared to other available techniques such as sputtering and e-beam evaporation. The LAD will be placed in the Solid State Technology Laboratory which has the capability for semiconductor device fabrication including Si-MOS, Si micromachining, and semiconductor lasers. The proposed LAD system will become the only LAD system in the North Texas region. The LAD system will be primarily used to deposit semiconducting YBaCuO thin films for application as uncooled microbolometers and semi-insulating YBaCuO thin films for application as uncooled pyroelectric detectors. This work is supported by the NSF, ARO and Texas Instruments. The cost of the proposed LAD system project is $275,000 of which SMU will provide a 45% cost share. YBaCuO is well known for its superconducting properties. However more recently, the nonsuperconducting phases of YBaCuO are demonstrating themselves useful in a number of applications including uncooled infrared (IR) detection, the second harmonic generation of light, and photoconductive switching. The materials are attractive since they are stable in composition and properties and easy to deposit. One of the phases of YBaCuO is YBa2Cu3O6+x. As x is increased from 0 to 1, YBa2Cu3O6+x evolves from an insulator with a well-defined energy gap to a Fermi glass, and then through a metal-insulator transition to a metal. Simultaneously, the crystal lattice changes from tetragonal to orthorhombic. The oxygen content thereby determines the electrical and optical properties of a material. YBa2Cu3O6+x is a ferroelectric material with pyroelectric properties. In the semi-insulating phase, it has a low leakage current and is therefore suitable for application as an uncooled pyroelectric detector. In the semi-conducting phase, YBa2Cu3O6+x has a narrow band-gap, inheren tly low 1/f noise and a large change in resistivity with temperature (TCR=3.9%) making it suitable as an uncooled bolometer. Our preliminary investigations have shown that semiconducting YBa2Cu3O6+x uncooled bolometers offer higher responsivities (Rv = 6x104V/W) and detectivities than cooled superconducting YBa2Cu3O6+x bolometers. In addition, their performance is superior to other uncooled IR detectors including VO2 bolometers and PbTiO3 pyroelectric detectors. To date, the semiconducting YBa2Cu3O6+x IR sensitive material has been fabricated by simple rf sputtering at room temperature onto Si, SiO2 and Si3N4 substrates, showing material compatibility with a CMOS process towards the fabrication of micromachined, uncooled microbolometer arrays with focal plane signal processing resultant in a low cost IR imaging circuit. We believe that control over the stoichiometry of the YBa2Cu3O6+x thin films would be significantly improved by the use of LAD for the thin film fabrication. This would allow for greater reproducibility and allow for the stoichiomery to be optimized to produce even better performance. Therefore the acquisition of a LAD system would be a tremendous benefit to the project. Further, an LAD system would improve the capability of the laboratory allowing for future research projects in the fabrication of compound oxide thin films with linear and nonlinear electro-optic properties. Work in this area would compliment the semiconductor laser group and allow for the fabrication of integrated optic devices. In addition, projects would be initiated on the application of ferroelectric compound oxides to Si devices such as the gate insulator in DRAMs. Since, the proposed system will be the only LAD system in North Texas, it is anticipated other researchers will be attracted to the facility. Faculty at SMU have a very cooperative relationship with faculty at the University of Texas at Arlington, the University of Texas at Dallas, and the University of North Texas. In addition, a large number of companies are involved in the fabrication of Si and GaAs devices in the Dallas-Ft. Worth metroplex which may need access to a LAD system to test some concepts. The probability is high that external users will find the facility attractive one established. ***