Acquisition of Instrumentation for Research and Development of Bonded Ultra Thin Silicon Wafers

9601937农民在过去的18个月里，基于他们在硅片加工、微机械、微电子机械系统、电气和光学表征以及相关领域的强大研究计划，NJIT的研究人员专门研究了将弗吉尼亚半导体公司的产品超薄硅片(薄至2微米)与初生硅和氧化硅衬底进行粘接的过程。这项工作最近完成了一项使用超薄硅的键合结构的联合专利申请，以及VSI承诺提供超薄晶片用于继续研究超薄晶片的工艺和机制，以及MEMS、绝缘体上的硅(SOI)和硅上的硅(SOS)应用。通过学术研究基础设施计划，NJIT正在寻求扩大其在超薄硅片键合方面的研究努力。***

9601937 Farmer Building on their strong research program on silicon wafer processing, micromachining, microelectromechanical systems (MEMS), electrical and optical characterization, and related areas over the past eighteen months, NJIT researchers have investigated specifically the process of bonding ultra-thin silicon wafers (as thin as 2 micrometers), a product of Virginia Semiconductor, Inc. (VSI), to virgin and oxidized silicon substrates. This work has recently culminated in a joint patent application for a bonded structure using ultra-thin silicon, and a commitment by VSI to supply ultra-thin wafers for continued research, both on the processes and mechanisms of ultra-thin wafer bonding, and on MEMS, silicon-on-insulator (SOI) and silicon-on-silicon (SOS) applications. Through the Academic Research Infrastructure Program, NJIT is seeking to expand its research efforts in ultra-thin silicon wafer bonding. ***